A voltage-controlled sampling device based on sensefet
A device and sampling voltage technology, applied in the field of power semiconductor devices, can solve the problems of insufficient research and design of high-voltage SenseFET, the device does not have the ability of external voltage detection, device failure, etc., to achieve the effect of controllable sampling ratio
Active Publication Date: 2021-04-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology
[0005] However, the research and design of the high-voltage SenseFET is not sufficient, and the device does not have the ability to detect the external voltage during the transient process of the external voltage from low to high, so there is a hidden danger of device failure
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[0019] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0020] A kind of voltage-controlled sampling device based on SenseFET of the present invention, as figure 1 As shown, its cellular structure includes a first conductivity type semiconductor substrate 1, a first conductivity type semiconductor doped region 3 on the right upper surface of the first conductivity type semiconductor substrate 1, and a first conductivity type semiconductor substrate 1 located on the first conductivity type ...
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The present invention provides a voltage-controlled sampling device based on SenseFET. The upper surface of the second conductive type semiconductor drift region is provided with a first first conductive type semiconductor sampling voltage control area and a second first conductive type semiconductor sampling voltage control area. The first first conductive type semiconductor sampling voltage control area and the second first conductive type semiconductor sampling voltage control area are located on the right side of the first conductive type semiconductor doped area and on the left side of the second conductive type semiconductor doped area, There is a voltage sensing electrode between the first first conductive type semiconductor sampling voltage control area and the second first conductive type semiconductor sampling voltage control area; the device of the present invention can control the sampling current through the gate during the turn-on period , the off cycle can realize the self-power supply of the chip. On the basis of realizing the original current sampling function, the device can realize the voltage follow from the low voltage to the high voltage transient during the conduction process to detect the change of the drain voltage, and The sampling ratio of the sampling voltage is controllable.
Description
technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a voltage-controlled sampling device based on SenseFET. Background technique [0002] In the high-voltage, power integrated circuits and systems related to power drives, it is necessary to detect the input / output performance and load conditions of high-voltage and power integrated circuits, so as to achieve real-time protection of circuits and systems and meet the intelligence of integrated circuits and systems. It can effectively ensure the normal and reliable operation of the system. Realizing the control of high-voltage and power integrated circuits and their application systems is a research hotspot and scientific difficulty at home and abroad. At present, the sampling technology includes peripheral component sampling and chip internal sampling, peripheral voltage sampling such as secondary side feedback sampling, resistance, current mirror sampling and oth...
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IPC IPC(8): H01L29/78H01L29/40H01L29/423
Inventor 李泽宏杨洋彭鑫赵一尚程然何云娇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA