Deposition system and gas transmission method thereof

Abstract

The invention discloses a deposition system. The deposition system comprises a first cavity, a second cavity and a gas supply device shared by the first cavity and the second cavity. The gas supply device comprises a precursor source A, a precursor source B and a sweeping gas source C. The precursor source A is connected with the first cavity and the second cavity through a first cavity precursorA output pipeline and a second cavity precursor A output pipeline correspondingly. The precursor source B is connected with the first cavity and the second cavity through a first cavity precursor B output pipeline and a second cavity precursor B output pipeline correspondingly. The sweeping gas source C is connected with the first cavity through a first cavity precursor A sweeping pipeline and a first cavity precursor B sweeping pipeline and connected with the second cavity through a second cavity precursor A sweeping pipeline and a second cavity precursor B sweeping pipeline. The deposition system can increase the utilization rate of precursors, and the occupied space of the deposition system can be reduced. The invention further discloses a gas transmission method of the deposition system.

Description

technical field [0001] The present invention relates to the technical field of semiconductor equipment, and more specifically, to a deposition system and a gas transmission method thereof. Background technique [0002] Atomic layer deposition (ALD) is a technology that forms a deposited film by alternately feeding gas phase precursors into the reaction chamber and undergoing chemical reactions. This technology can deposit substances layer by layer in the form of a single atomic film. Plated on the surface of the substrate, when the precursors reach the surface of the deposition substrate, they will be chemically adsorbed on the surface of the substrate. The reaction chamber needs to be purged with an inert gas between precursor pulses to remove excess precursors that are not adsorbed on the substrate surface and ensure that chemical reactions only occur on the substrate surface. The ALD process is limited by its growth principle, its growth rate is the lowest compared with ...

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Problems solved by technology

[0011] However, in the above-mentioned existing ALD device, the precursors A and B need to be alternately transported into the reaction chamber during transport, and there are only two transport paths, that is, in addition to entering the reaction chamber to participate in the reaction, in other steps Both will be transported to the factory exhaust gas treatment through the exhaust gas discharge device, so the precursor A source bottle and the precursor B sour

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