A kind of Gan-based light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a GaN-based light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the field of GaN-based light emitting diodes. The light emitting diode epitaxial wafer comprises a substrate and a buffer layer, a non-doped GaN layer, an N-type doped GaN layer, a low-temperature stress releasing layer, a BInGaN layer, a multi-quantum well layer, a low-temperature P-type GaN layer, an electron barrier layer, a high-temperature P-type GaN layer and a P-type contact layer which are sequentially deposited on the substrate, wherein the multi-quantum well layerincludes a plurality of stacked GaN barrier layers, two adjacent GaN barrier layers are provided with an InGaN well layer therebetween, the BInGaN layer is a BxIn<1.5x>Ga<1-2.5x>N layer, and x is greater than or equal to 0.1 and less than or equal to 0.3.

Description

technical field [0001] The invention relates to the field of GaN-based light-emitting diodes, in particular to a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A GaN (gallium nitride)-based LED (Light Emitting Diode, light emitting diode), also called a GaN-based LED chip, generally includes an epitaxial wafer and electrodes prepared on the epitaxial wafer. The epitaxial wafer usually includes: a substrate, a buffer layer sequentially stacked on the substrate, a non-doped GaN layer, an N-type GaN layer, an MQW (Multiple Quantum Well, multiple quantum well) layer, an electron blocking layer, and a P-type GaN layer. layer and contact layer. When a current is injected into the GaN-based LED, the electrons in the N-type region such as the N-type GaN layer and the holes in the P-type region such as the P-type GaN layer enter the MQW active region and recombine to emit visible light. Wherein, the MQW layer is genera...

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Problems solved by technology

[0003] In the process of realizing the present invention, the inventors have found that the prior art has at least the following problems: when the current density injected into the GaN-based LED exceeds a certain value (lower than the rated current of the LED), the quantum efficiency of the GaN-based LED will increase with the injection The increase of current, the phenomenon of turning from rising to falling, that is, the droop effect

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