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Flash memory service life prediction method and system and storage medium

A technology of life prediction and flash memory, applied in information storage, static memory, read-only memory, etc., can solve problems such as data error, storage unit failure, and reliability reduction, and achieve high accuracy, high flexibility, and optimized prediction capabilities Effect

Inactive Publication Date: 2019-05-31
武汉置富半导体技术有限公司
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AI Technical Summary

Problems solved by technology

[0003] Reduced reliability has been one of the major concerns for data storage in flash memory
During the use of flash memory, various errors will occur in the data stored in its unit and eventually cause the storage unit to fail. If the storage medium generates uncorrectable data errors when the flash memory is running, it will affect the normal use of the entire storage system

Method used

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  • Flash memory service life prediction method and system and storage medium
  • Flash memory service life prediction method and system and storage medium
  • Flash memory service life prediction method and system and storage medium

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Embodiment Construction

[0046] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0047] figure 1It is a schematic flow chart of predicting the lifetime of flash memory in the present invention, and the life prediction process of flash memory shown in the figure is applicable to all types of flash memory. figure 1 Give a detailed explanation.

[0048] In this embodiment, a 3D multi-level cell NAND flash (MLC NAND flash) product under a certain manufacturing process is used as a measurement object and a lifetime prediction object.

[0049] Such as figure 1 Shown, a flash life prediction method of artificial neural network comprises the following steps:

[0050] In step S01, the data acquisition device measures the feature quantity data required to predict the lifetime of the target flash memory...

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Abstract

The invention relates to a flash memory service life prediction method and system and a computer readable storage medium. The method comprises the following steps: firstly, collecting characteristic quantity data required for predicting the service life of the flash memory through a flash memory data collection device;, carrying out operation on the characteristic quantity, forming a set by the measured characteristic quantity and the operation result of the characteristic quantity, taking a subset in the set as the input of an artificial neural network, operating the artificial neural network, and finally performing calculating by the artificial neural network to obtain the life prediction value of the flash memory corresponding to the characteristic quantity. According to the method forpredicting the service life of the flash memory by adopting the artificial neural network, the change characteristics of the parameters of the flash memory can be extracted more effectively, meanwhile, the prediction capability of the artificial neural network can be optimized by inputting new data or changing a training method and the like, and compared with a common prediction method, the methodis higher in flexibility.

Description

technical field [0001] The present invention relates to the technical field of flash memory lifetime prediction, in particular to an artificial neural network-based flash memory lifetime prediction method, system and computer-readable storage medium. Background technique [0002] With the development of electronic technology, memory, as the carrier of data stored in electronic equipment, has become more and more important in modern life. Flash memory is a non-volatile memory that can save data for a long time after power failure, and has the advantages of fast data transmission speed, low production cost, and large storage capacity. It is widely used in communication, consumer, computer, industrial control, military, etc. Flash memory has gradually become the most potential memory product at present. [0003] Reduced reliability has always been one of the main issues with data storage in flash memory. During the use of flash memory, various errors will occur in the data st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C29/56
Inventor 刘政林潘玉茜张浩明李四林
Owner 武汉置富半导体技术有限公司
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