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Trench gold oxygen semiconductor element and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in the direction of semiconductor devices, electrical components, electric solid devices, etc., can solve problems such as increased manufacturing costs, achieve the effect of reducing the number of processes and reducing manufacturing costs

Inactive Publication Date: 2019-06-04
UPI SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this structure needs to be fabricated using additional processing, resulting in increased manufacturing costs

Method used

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  • Trench gold oxygen semiconductor element and manufacturing method thereof
  • Trench gold oxygen semiconductor element and manufacturing method thereof
  • Trench gold oxygen semiconductor element and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Figure 1A to Figure 1H It is a sectional view of the manufacturing process of the trench metal oxide semiconductor device according to an embodiment of the present invention. figure 2 for Figure 1H Top view of the PN junction in .

[0035] Please refer to Figure 1A , providing a substrate 100. The substrate 100 includes a silicon substrate, and may further include an epitaxial silicon layer disposed on the silicon substrate. The substrate 100 defines an active region R1 and a termination region R2.

[0036] Next, a trench 102 extending from the active region R1 to the terminal region R2 is formed in the substrate 100 . The trench 102 can be formed by patterning the substrate 100 through lithography and etching.

[0037] Then, an insulating layer 104 is formed on the surface of the trench 102 . The insulating layer 104 further extends to the top surface of the substrate 100 in the termination region R2 structure. The material of the insulating layer 104 can be...

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PUM

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Abstract

The invention relates to a trench gold oxygen semiconductor element and a manufacturing method thereof. The trench gold oxygen semiconductor element comprises a substrate, a first electrode, a secondelectrode, a plurality of first conductivity type first doping areas, and a plurality of second conductivity type second doping areas. The substrate defines an active area and a terminal area and is provided with a trench that extends from the active area to the terminal area. The first electrode is arranged in the trench. The second electrode is arranged in the trench and is arranged on the firstelectrode. The second electrode comprises an extending part that extends to the top surface of the substrate. The substrate, the first electrode and the second electrode are isolated from each otherelectrically. The first conductivity type first doping areas and the second conductivity type second doping areas are interacted with each other in the extending part to form a plurality of PN interfaces. The provided trench gold oxygen semiconductor element can effectively reduce the processing number and the manufacturing cost is reduced.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof, in particular to a trench metal oxide semiconductor element and a manufacturing method thereof. Background technique [0002] In the field of power switches, Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have been widely used. MOSFETs receive control signals through their gates and turn on their sources and drains to achieve power switch functions. When the power switch is in use, it is often caused by electrostatic discharge (ESD) caused by external static electricity to cause breakdown or burnout of components. Therefore, electrostatic discharge protection components are usually installed in the components to prevent damage caused by electrostatic discharge. [0003] The traditional ESD protection device is an independent Zener diode structure, which is arranged in series between the contact window of the gate and the contact window of the source. How...

Claims

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Application Information

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IPC IPC(8): H01L27/02
Inventor 陈劲甫
Owner UPI SEMICON CORP