A chemical vapor deposition device including a Raman spectroscopy in-situ measurement chamber

Abstract

The present invention relates to a chemical vapor deposition device comprising a Raman spectroscopy in-situ measurement cavity. The device comprises a transmission device, a reaction cavity for performing chemical vapor deposition reaction on a thin film material and a monitoring cavity for performing Raman spectroscopy in-situ monitoring on the thin film material; the reaction cavity communicateswith the monitoring cavity, a reaction base is arranged in the reaction cavity, and a Raman spectroscopy monitoring module is arranged in the monitoring cavity; the reaction base is used as a substrate for film material growth; the transmission device is used for controlling the reaction base to move between the reaction chamber and the monitoring chamber; and the Raman spectroscopy monitoring module is used for performing Raman spectroscopy in-situ monitoring on the thin film material moved into the monitoring cavity. The present invention provides the chemical vapor deposition device comprising the Raman spectroscopy in-situ measurement cavity, which solves the problem of in-situ Raman detection of the thin film under the condition that the growth of the thin film is not affected, and further can adjust the process in real time to reduce defects.

Description

technical field [0001] The invention relates to a chemical vapor deposition device, in particular to a chemical vapor deposition device including a Raman spectrum in-situ measurement chamber. Background technique [0002] The third-generation semiconductor materials include diamond, silicon carbide, and gallium nitride, which have the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate, and high bonding energy, which can meet the requirements of modern electronic technology for high temperature, high power, and high voltage. New requirements for harsh conditions such as high frequency, high frequency and radiation resistance have important application prospects in the fields of semiconductor lighting, power electronic devices, lasers and detectors. [0003] At present, chemical vapor deposition is the main method for preparing thin films such as diamond, silicon carbide and gallium nitride, but there are some insurmount...

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Problems solved by technology

[0004] In order to solve the above problem, the present invention provides a chemical vapor deposition device including a Raman spectroscopy in-situ measurement cavity, which solves the problem of in-situ Raman detection of the film without affecting the growth of the film, and then adjusts the process in real time to reduce defects

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