The invention discloses a preparation method of a high-
voltage and ultrahigh-
voltage tantalum capacitor cathode. The preparation method comprises the following steps of performing a pre-compensation forming process on a
tantalum block; soaking in the solution A after high-temperature
drying, then carrying out a high-temperature
thermal decomposition process, and cooling after completion of the
thermal decomposition process; carrying out an intermediate repair forming procedure, and then carrying out high-temperature
drying; dipping in a solution B, then carrying out a high-temperature
thermal decomposition process, and cooling after completion; carrying out an intermediate repair forming process, then dipping in the solution C, and then
drying; carrying out high-temperature air
decomposition, and then cooling; dipping in a solution D, then carrying out a high-temperature thermal
decomposition process, and cooling after completing the thermal
decomposition process; and then carrying out a final repair forming process, drying at a high temperature, and dipping a
cathode auxiliary material to complete the preparation of the
capacitor cathode. By obtaining the
manganese dioxide layer, the influence of various stresses on the
dielectric oxide film is reduced in multiple high-temperature thermal decomposition processes, the risk of leakage current increase or breakdown caused by degradation of weak parts or defects of the
dielectric oxide film is reduced, and the qualified rate and reliability of the
capacitor are improved.