181results about How to "Reduce stress effects" patented technology

The invention discloses an alkaline-developable photosensitive solder resist ink for FPC. The alkaline-developable photosensitive solder resist ink comprises alkali-soluble photosensitive resin, active diluent, pigment, epoxy resin, photoinitiator, flexibilizer and filler. The invention further discloses a preparation method for the alkaline-developable photosensitive solder resist ink used for FPC, application of the alkaline-developable photosensitive solder resist ink used for FPC and FPC products using the alkaline-developable photosensitive solder resist ink used for FPC. With the solder resist ink, a cured coating has high hardness, good adhesion on a substrate, good chemical resistance and good flexural endurance.

The invention discloses a flat piezoelectric layer structure of a bulk acoustic wave resonator and a manufacturing process. The manufacturing process comprises the following steps: forming a cavity ona substrate; filling a sacrificial material in the cavity; manufacturing a bottom electrode layer on the filled cavity; sequentially applying a barrier layer and a dielectric layer around the bottomelectrode layer to keep the surface of a composite layer formed by the barrier layer and the dielectric layer flat with the surface of the bottom electrode layer; and fabricating a piezoelectric layeron the surfaces of the composite layer and the bottom electrode layer so that the piezoelectric layer does not contact the substrate. The stress consistency of the piezoelectric layer is improved, the stress influence of the piezoelectric layer is reduced, an electromechanical coupling coefficient of a device is controlled within the optimal range, the quality factor of the resonator, the yield of the device and the consistency and reliability of the finished product of the device are improved, the effective resonance area is larger and closer to the cavity and does not exceed the cavity, andthe size of the device can be reduced. By arranging a seed layer and a passivation layer, the bottom electrode layer and the top electrode layer can be protected, the bottom electrode layer is manufactured inside the resonator, and the mechanical stability is maintained.

The invention provides a method for growing a GaN material on multiple substrates or large-size substrates simultaneously by a hydride vapor phase epitaxy (HVPE) technology, and also provides a device capable of implementing the method, in particular a nozzle used for providing a large-area growth area. When the method is applied to the device provided by the invention, more than 5 2-inch GaN substrates (depending on a constant temperature area range and the size of the nozzle) or more than one 4-inch or 6-inch substrate can be grown simultaneously. Due to the nozzle design, gallium oxide GaCl and ammonia NH3 are not mixed at the nozzle, pre-reaction at the nozzle is reduced, a pipeline is prevented from being blocked, the GaCl and the NH3 are only mixed on the surfaces of the substrates to form a uniform mixed layer, and the thickness uniformity and quality of GaN products are improved.

The invention discloses a radiating structure for an outer-rotor direct-current brushless motor. In the radiating structure, a radiating boss is machined on the inner wall of a stator protective end cover; the plane of the boss is in insulative close contact with a radiating plane of an electronic element on a direct-current electric control circuit board; and a groove is reserved on the outer wall, corresponding to the position of the boss, of the stator protective end cover. Because an original radiating bracket installation position of the electronic element is changed to the boss of the inner wall of the stator protective end cover from a stator bearing bracket, the radiating boss of the electronic element is far away from a stator winding heating source, and the stator winding heating source is prevented from diffusing and transferring directly through the stator bearing bracket in a split structure mode; and because the radiating groove is reserved on the outer wall of the radiating boss, on one hand, a radiating effect is improved by increasing a radiating area, on the other hand, the rigidity of a shell of a product is improved and material cost is saved. The radiating structure has high radiating efficiency, high rigidity and low production cost, and is suitable to be used in various outer-rotor direct-current brushless motors.

The invention discloses a lid structure of washing machine, which comprises the following parts: lid body, buffer structure around lid body, lid around the buffer structure. The making method of lid comprises the following steps: tightening buffer structure around lid body; placing lid body with buffer structure in the mould; flowing resin composition in the mould; solidifying the resin composition; separating the mould; making buffer structure adsorb stress from lid.

The invention relates to a readout circuit and a readout method for an electrically erasable read-only memory. The readout circuit comprises a comparator, a reference resistor, a sensing resistor, a reference unit and a storage unit, wherein the readout circuit is only configured with one reference unit, and the same reference unit is used in the process of reading operation; the threshold voltage of the reference unit is set into neutral threshold voltage; and the voltage on a reference unit control grid is set into a fixed value, so that the configuration time in the manufacturing process is obviously reduced, and the threshold added on a storage unit control grid is changed along with operating modes. Meanwhile, the voltage added on the storage unit control grid during the reading operation and programming verification operation is lower than that in the prior art, so that a stress effect of grid voltage is reduced, and the threshold voltage of the reference unit is set to a value approaching the neutral threshold voltage so as to be more stable.

The invention discloses an array waveguide grating structure based on a PLC (programmable logic controller) technique and a manufacturing method thereof. The manufacturing method comprises the following steps of: selecting a substrate, depositing and growing a B and P doped silica layer as a lower coating layer on the selected substrate by adopting a PECVD (plasma enhanced chemical vapor deposition) process; growing a waveguide core layer on the lower coating layer; preserving a waveguide core in a preset shape on the waveguide core layer, and corroding to remove the part except the waveguide core in the preset shape and to remain the waveguide core in the preset shape; and growing a B and P highly doped silica layer capable of completely covering the lower coating layer and the waveguide core as an upper coating layer on the lower coating layer and the waveguide core, so that the needed array waveguide grating structure based on the PLC technique is manufactured. By using the array waveguide grating structure based on the PLC technique and the manufacturing method thereof, which are provided by the invention, the defects of long growth period, high cost, bad product performance and the like in the prior art can be overcome, so as to realize the advantages of short growth period, low cost and good product performance.

This invention provides a method for eliminating stress and damage when forming a channeled isolation element including: providing a semi-conductor basic material to be etched to form a channeled structure, processing the channeled structure with high temperature annealing or quick heat annealing to eliminate stress of the channeled structure to reach the aim of avoiding the reduction of the reliability, semiconductive elements or annealing processing to a sidewall oxidation layer to eliminate the stress generated by the oxidation layer of the channeled structure.

The invention relates to a roof cutting pressure relief protective method for an exploitation stop face of a fully mechanized working face, and belongs to the technical field of surrounding rock stability protection for a permanent tunnel by the fully mechanized working face. In the protection method, the exploitation stop face of the fully mechanized working face is preset between a coal mining tunnel area and a goaf, an overlying stratum layer over the exploitation stop face is cut vertically upwardly before that a three-machine system is evacuated from the exploitation stop face to obtain aroof cutting surface, the overlying stratum layer over the exploitation stop face is disconnected from the overlying stratum layer over the coal mining tunnel area by the roof cutting surface, so that when the three-machine system is used for support, stress connection between the overlying stratum layers over the exploitation stop face and the coal mining tunnel area is cut off rapidly. Influence of high stress of the overlying stratum layer over the exploitation stop face on stress of the overlying stratum layer over the coal mining tunnel area is eliminated effectively, a dynamic pressuresource acted on the tunnel is eliminated fundamentally, a large tunnel or a concentrated tunnel of the goaf is avoided from high concentrated stress, and the permanent tunnel is kept safe and stable for long time.

The invention provides a flexible electronic device and a manufacturing method therefor. The electronic device comprises a flexible substrate and a device layer formed on the flexible substrate. The device comprises a semiconductor structure and a wire structure, which are connected with each other. The extending direction of the wire structure is consistent with the trench direction of the semiconductor structure. The extending direction of a first wire structure and the stretching direction of the flexible substrate form an inclined angle which is less than 90 degrees. According to the invention, the impact on the semiconductor structure and the first wire structure from stress is reduced to the minimum value through the adjustment of the trench direction of the semiconductor structure and the extending direction of the first wire structure, thereby guaranteeing the electrical performances and anti-kneading performances of the flexible electronic device.

The invention discloses a dry flattening method for pure titanium strip coils by the aid of a common cold rolling mill. A pure titanium strip coil is fed into the common cold rolling mill after annealing treatment, and under conditions of the rolling speed of 15m/min to 50m/min, unit uncoiling tension of 1kg/mm2 to 10kg/mm2, unit rolling tension of 1.5kg/mm2 to 15kg/mm2 and rolling force of 100 tons to 400 tons, a working roll on the common cold rolling mill directly realizes dry flattening of the pure titanium strip coil in a constant rolling force control mode. By the dry flattening method, influence of stress is eliminated after the cold-annealed pure titanium strip coil is flattened by the common cold rolling mill in a dry manner, a board is flattened, unevenness of the board of the pure titanium strip coil after being flattened in the dry manner is smaller than or equal to 3mm/m, and relevant Chinese and American standard requirements and customer service requirements on various mechanical property indexes and surface quality can be met.

The invention relates to the technical field of negative thermal expansion materials, and discloses a conductive Mg-P co-doped Cu2V2O7-graphene negative thermal expansion material and a preparation method thereof. The conductive Mg-P co-doped Cu2V2O7-graphene negative thermal expansion material comprises the following formula raw materials: graphene oxide, CuO, MgO, V2O5 and NH4H2PO4. According tothe conductive Mg-P co-doped Cu2V2O7-graphene negative thermal expansion material and the preparation method thereof, Cu2V2O7 has a stable linear negative thermal expansion coefficient, a centrosymmetric monoclinic phase structure is formed by doping Cu2V2O7 with Mg, under temperature variation, the Mg-O bond generates a vibration effect, the internal coupling effect of the Cu2V2O7 crystal is improved, a linear chain-shaped monoclinic phase in the crystal is destroyed, oxygen atoms form a new arrangement in the crystal lattice, local collapse occurs, the Cu2V2O7 is enabled to show a negativethermal expansion phenomenon, P atoms replace part of V atoms, the grain size of Cu2V2O7 is reduced, the bond energy of P-O bonds is larger than that of V-O bonds, stress in Cu2V2O7 lattices is reduced, lattice distortion is reduced, the electron scattering probability and the high-frequency dielectric constant are reduced, and therefore the conductivity of Cu2V2O7 is enhanced.

The invention relates to a method for machining a key part on semiconductor encapsulation equipment. A rectangular Peek plate is located and clamped on a bench clamp of a vertical milling machine, andthe lower surface, the upper surface and the side faces are subjected to rough machining; the lower surface and the upper surface are subjected to rough machining on a grinding machine; the upper surface is machined through a stainless steel four-blade milling cutter, and bottom holes of threaded holes are drilled in the upper surface through a twist drill; bottom holes of bolt holes and stainless steel locating holes are subjected to rough machining through a four-blade tungsten steel milling cutter; bottom holes of black light sensing original points are drilled in the upper surface throughthe twist drill, and assembly holes of the black light sensing original points are machined through a drill bit; the lower surface is subjected to finish machining through the stainless steel four-blade milling cutter; stainless steel bushes are mounted on the bottom holes of the stainless steel locating holes; black PEEK cylinders are mounted on the bottom holes of the black light sensing original points; the stainless steel bushes of the stainless steel locating holes are subjected to rough machining through the four-blade tungsten steel milling cutter, the stainless steel locating holes are subjected to finish machining through the four-blade tungsten steel milling cutter, and the stainless steel locating holes are formed; the upper surface and the lower surface are subjected to finishmachining through a tungsten steel grinding wheel; and an encapsulation position groove is subjected to rough machining through the four-blade tungsten steel milling cutter.

The invention discloses an image sensor and a forming method thereof. The forming method includes: providing a semiconductor substrate; etching the semiconductor substrate to form an isolating groove;forming a medium thin film which covers the inner wall of the isolating groove; forming a metal blocking layer which covers the medium thin film; forming a tensile stress layer which fills at least apart of groove space surrounded by the metal blocking layer. By the forming method, compressive stress generated on the semiconductor substrate by a filling material in deep-groove isolation can be lowered.

The invention relates to the technical field of MEMS light modulators, in particular to an MEMS blazed grating light modulator and an array. Double-layer comb drive is adopted by the movable MEMS large turning angle blazed grating light modulator and the double-layer comb drive position is located on flexible support beams at the two ends of an optical grating mirror face. When a plurality of movable blazed grating light modulators are used for forming the array, each movable MEMS large turning angle blazed grating light modulator under double-layer comb drive can be controlled by a drive circuit to independently work and a gap between every two optical grating mirror faces is small. According to the structure, an optical grating can be made to deflect to the two sides at a large angle and has the advantages of being large in deflection angle, high in diffraction efficiency, high in tuning frequency and resistant to adhesion. The optical grating light modulator and the array of the optical grating light modulators can be applied to the fields of spectrometers, optical communication, accurate measurement, laser shaping, displaying and the like.

The invention discloses a monitor support. The support is used for assembling a monitor. The monitor support comprises a body, wherein the body comprises a first supporting section and a second supporting section, the first supporting section and the second supporting section are connected through a bending section, the first supporting section comprises a first combination portion and a second combination portion, the second supporting section comprises a first combination portion and a second combination portion, first combination portions and second combination portions are matched, the bending section comprises a bending buffering region, the bending buffering region comprises a bridge connecting portion and a compressed buffering space, two ends of the bridge connecting portion are respectively connected to the first supporting section and the second supporting section, the compressed buffering space is defined by first combination portions, second combination portions and the bridge connecting section, a bearing space is formed between the first supporting section and the second supporting section when the first supporting section and/or the second supporting section are/is bent inwards, and the monitor is located in the bearing space. The support has the advantages of being capable of eliminating effect of stress caused by stamping and bending. The invention also discloses a preparation method of the monitor support.