Multi-substrate large-size hydride vapor phase epitaxy method and device

A hydride gas phase, large-scale technology, applied in chemical instruments and methods, from chemically reactive gases, electrical components, etc., can solve problems such as limiting the yield of GaN substrates, limited range of uniform growth, and limited epitaxial film quality, etc. Achieve the effect of prolonging the growth time of a single furnace, uniform distribution of the deposition rate, and improving the output of a single furnace

Active Publication Date: 2011-06-29
SINO NITRIDE SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main problem at present is that the further improvement of device performance and the design and manufacture of some new devices are limited by the quality of the substrate material and the epitaxial film in the device str

Method used

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  • Multi-substrate large-size hydride vapor phase epitaxy method and device
  • Multi-substrate large-size hydride vapor phase epitaxy method and device
  • Multi-substrate large-size hydride vapor phase epitaxy method and device

Examples

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Embodiment 1

[0037] Horizontal HVPE growth system, buffer layer growth temperature 700°C, growth time 30s~300s, HCl and NH 3 It is passed into the reaction chamber at a ratio of 1:30, the carrier gas is nitrogen or hydrogen, and the typical flow rate is 15SLM. Raise the temperature to a growth temperature of 930°C to 1030°C, grow a GaN thick film for 10 hours, with a thickness of more than 700 microns, growth conditions: HCl and NH 3 The ratio is 1:30, but the flow rate is increased, the HCl flow rate is 500sccm~1500sccm, and the carrier gas flow rate is adjusted according to the flow field to ensure uniform GaCl and NH on the tray under the nozzle 3 distributed.

[0038] After the growth is completed, the tray is pulled out from the growth area, and the cooling rate is adjusted by controlling the speed of pulling out. When the temperature is higher than 700°C, the cooling rate is controlled at 5°C / min, and when the temperature is lower than 700°C, the cooling rate is increased to 40°C / m...

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Abstract

The invention provides a method for growing a GaN material on multiple substrates or large-size substrates simultaneously by a hydride vapor phase epitaxy (HVPE) technology, and also provides a device capable of implementing the method, in particular a nozzle used for providing a large-area growth area. When the method is applied to the device provided by the invention, more than 5 2-inch GaN substrates (depending on a constant temperature area range and the size of the nozzle) or more than one 4-inch or 6-inch substrate can be grown simultaneously. Due to the nozzle design, gallium oxide GaCl and ammonia NH3 are not mixed at the nozzle, pre-reaction at the nozzle is reduced, a pipeline is prevented from being blocked, the GaCl and the NH3 are only mixed on the surfaces of the substrates to form a uniform mixed layer, and the thickness uniformity and quality of GaN products are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation, and in particular relates to a method for preparing a compound semiconductor material by using a gas-phase source gas, especially a method and special equipment for preparing a III-V compound semiconductor single crystal layer or a self-supporting single crystal substrate, especially Involves showerhead design for large area hydride vapor phase epitaxy (HVPE) deposition. Background technique [0002] The optoelectronic industry is one of the largest and most active industries in the 21st century. The development of the optoelectronic industry depends on the renewal and progress of optoelectronic materials and processes. GaN-based semiconductor materials have high internal and external quantum efficiencies, high luminous efficiency, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness, ...

Claims

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Application Information

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IPC IPC(8): C30B25/14C30B29/40H01L21/205
Inventor 刘鹏李燮陆羽孙永健张国义
Owner SINO NITRIDE SEMICON
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