Multi-substrate large-size hydride vapor phase epitaxy method and device

Abstract

The invention provides a method for growing a GaN material on multiple substrates or large-size substrates simultaneously by a hydride vapor phase epitaxy (HVPE) technology, and also provides a device capable of implementing the method, in particular a nozzle used for providing a large-area growth area. When the method is applied to the device provided by the invention, more than 5 2-inch GaN substrates (depending on a constant temperature area range and the size of the nozzle) or more than one 4-inch or 6-inch substrate can be grown simultaneously. Due to the nozzle design, gallium oxide GaCl and ammonia NH3 are not mixed at the nozzle, pre-reaction at the nozzle is reduced, a pipeline is prevented from being blocked, the GaCl and the NH3 are only mixed on the surfaces of the substrates to form a uniform mixed layer, and the thickness uniformity and quality of GaN products are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation, and in particular relates to a method for preparing a compound semiconductor material by using a gas-phase source gas, especially a method and special equipment for preparing a III-V compound semiconductor single crystal layer or a self-supporting single crystal substrate, especially Involves showerhead design for large area hydride vapor phase epitaxy (HVPE) deposition. Background technique [0002] The optoelectronic industry is one of the largest and most active industries in the 21st century. The development of the optoelectronic industry depends on the renewal and progress of optoelectronic materials and processes. GaN-based semiconductor materials have high internal and external quantum efficiencies, high luminous efficiency, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness, ...

AI Technical Summary

Problems solved by technology

The main problem at present is that the further improvement of device performance and the design and manufacture of some new devices are limited by the quality of the substrate material and the epitaxial film in the device structure.

However, the general HVPE reactor can provide a limited range of uniform growth, so the number of substrates obtained for each growth is limited, which limits the output of GaN substrates and increases production costs.

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