Method for eliminating stress and damage while forming isolation component

Abstract

This invention provides a method for eliminating stress and damage when forming a channeled isolation element including: providing a semi-conductor basic material to be etched to form a channeled structure, processing the channeled structure with high temperature annealing or quick heat annealing to eliminate stress of the channeled structure to reach the aim of avoiding the reduction of the reliability, semiconductive elements or annealing processing to a sidewall oxidation layer to eliminate the stress generated by the oxidation layer of the channeled structure.

Description

(1) Technical field [0001] The present invention relates to a method for eliminating stress and damage when forming isolation elements, in particular to a method for eliminating stress and damage when forming shallow trench isolation elements. (2) Background technology [0002] It is a common practice to use shallow-trench isolation technology to isolate components in integrated circuit manufacturing. Generally speaking, anisotropic etching process is used to form steep trenches on a semiconductor substrate using silicon nitride as a mask. Next, the trench is filled with oxide to form a shallow trench isolation device whose surface is at the same level as the surface of the substrate. [0003] Figure 1A to Figure 1D Schematic cross-sectional view of shallow trench isolation formed by conventional methods. refer to Figure 1A As shown, a pad oxide layer 122 (pad oxide layer) is formed on the silicon substrate 110 to protect the silicon substrate 110, and the pad oxide lay...

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Problems solved by technology

For example, during trench etching, it may cause stress and damage to the active area...

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