Array substrate, preparation method thereof and display screen
A technology for array substrates and display areas, applied in the fields of array substrates and their preparation, and display screens, can solve problems such as easy breakage of peripheral metal wiring, and achieve the effects of improving screen yield, improving reliability, and avoiding breakage
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[0059] The invention also provides a method for preparing the array substrate.
[0060] A method for preparing an array substrate, the array substrate has a display area and a non-display area located outside the display area; the method for preparing the non-display area includes the following steps:
[0061] S1. Forming a buffer layer on a flexible substrate.
[0062] S2, forming amorphous silicon film strips on the buffer layer.
[0063] S3, covering the inorganic film layer on the amorphous silicon film strip and the buffer layer.
[0064] S4. Open a step hole on the inorganic film layer to leak the side vertices of the amorphous silicon film strip; then fill the step hole with a source of migration metal, and then temper to make part of the metal atoms in the source of transfer metal migrate to the non-crystalline silicon Silicon film strips to form elastic film strips.
[0065] S5, forming peripheral metal wiring on the inorganic film layer.
[0066] Wherein, Step S1...
Embodiment 1
[0081] Coating on glass to form 8um thick flexible substrate (PI); PECVD on flexible substrate to form 60nm thick barrier layer (SiO 2 ); on the barrier layer, PECVD forms a 60nm thick buffer layer (SiNx); on the buffer layer, CVD deposition forms a 50nm thick amorphous silicon layer; on the amorphous silicon layer, CVD deposition forms a 10nm thick GI layer (SiO 2 ); on the GI layer, CVD deposition forms a 10nm thick CI layer (SiNx); on the CI layer, CVD deposition forms a 60nm thick ILD layer (SiO2); generates via holes by dry etching; on the ILD layer, sputtering (Sputter ) deposition to form a 55nm thick metal layer (Ti / Al / Ti). Tempering yields Product A.
[0082] Using an optical microscope (Nikon L300ND) to irradiate product A with reflected light from the side of the flexible substrate, the enlarged image obtained is shown in image 3 .
[0083] from image 3 , it can be seen that the brightness of the amorphous silicon layout is high, and it has an aluminum metal c...
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