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Threshold voltage distribution prediction method and device

A technology of threshold voltage distribution and prediction method, applied in the field of integrated circuits, which can solve problems such as lack of physical mechanisms

Active Publication Date: 2019-06-07
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method based on model simulation mainly regards the threshold voltage distribution of NAND Flash as a superposition of Gaussian distribution and other distribution forms, lacking the underlying physical mechanism

Method used

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  • Threshold voltage distribution prediction method and device
  • Threshold voltage distribution prediction method and device
  • Threshold voltage distribution prediction method and device

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Experimental program
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Embodiment 1

[0054] see figure 1 , the embodiment of the present invention provides a threshold voltage distribution prediction method, the method specifically includes the following steps:

[0055] Step 101: Perform incremental step pulse programming on the solid state disk, and count the initial cell number and initial threshold voltage distribution information corresponding to each programming state.

[0056] The execution subject of the embodiment of the present invention may be a controller of a solid state disk. The memory of the solid-state hard disk includes multiple Pages (pages), each Page includes multiple storage units, and multiple bits (bits) can be stored in each storage unit. Carry out incremental step pulse programming to the solid-state hard disk, and store data in the Page by applying a programming voltage to the Page of the solid-state hard disk. Assuming that a bit can be stored in a storage unit, then there may be 2 bits in the storage unit a arrangement, so there ...

Embodiment 2

[0098] see Figure 4 , an embodiment of the present invention provides a threshold voltage distribution prediction device, the device is used to perform the threshold voltage distribution prediction method provided by the above-mentioned embodiment 1, and the device includes:

[0099] The statistics module 20 is used to perform incremental step pulse programming on the solid-state hard disk, and count the number of erased units, the number of initial units corresponding to each programming state, and the initial threshold voltage distribution information;

[0100] an allocation module 21 for allocating a sensing voltage to each programming state;

[0101] The acquisition module 22 is used to maintain a certain duration, and according to the number of erased cells, the corresponding initial cell number of each programming state and the sensing voltage, obtain the corresponding sensing cell number of each programming state respectively;

[0102] The determination module 23 is c...

Embodiment 3

[0123] An embodiment of the present invention provides a threshold voltage distribution prediction device, the device includes one or more processors, and one or more storage devices, one or more programs are stored in the one or more storage devices, one or more When the program is loaded and executed by one or more processors, the threshold voltage distribution prediction method provided in the above-mentioned Embodiment 1 is implemented.

[0124] The threshold voltage distribution prediction device may be a solid-state disk, the processor may be a controller included in the solid-state disk, and the storage device may be a memory included in the solid-state disk.

[0125] In the embodiment of the present invention, incremental step pulse programming is performed on the solid-state hard disk, and the number of erased cells, the number of initial cells corresponding to each programming state, and the initial threshold voltage distribution information are counted; the sensing v...

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Abstract

The invention discloses a threshold voltage distribution prediction method and device, and the method comprises the steps: carrying out the incremental step pulse programming of a solid state disk, carrying out the statistics of the number of erasure units, the number of initial units corresponding to each programming state, and initial threshold voltage distribution information; distributing a sensing voltage for each programming state; keeping a certain time length, and respectively obtaining the number of sensing units corresponding to each programming state according to the number of erasing units, the number of initial units corresponding to each programming state and the sensing voltage; and respectively determining retention threshold voltage distribution information corresponding to each programming state according to the retention noise model, the number of sensing units corresponding to each programming state and the initial threshold voltage distribution information. According to the method, the threshold voltage distribution information of each programming state can be restored by only one voltage sensing operation for each programming state on the basis of a noise maintaining model, so that accurate and rapid prediction of threshold voltage distribution is realized, and guidance is provided for read voltage optimization and ECC design.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a threshold voltage distribution prediction method and device. Background technique [0002] Currently, the SSD (Solid State Disk, solid-state drive) technology based on NAND Flash (NAND flash memory) is widely used in many fields. With the continuous shrinking of NAND device size and the introduction of multi-bit (bit) storage technology, its reliability continues to degrade. In the case of hold operation, the gradually decreasing read threshold voltage window causes a sharp increase in the number of NAND errors. Therefore, the ECC (Error Correcting Code, error checking and correction) mechanism is widely used in SSD controllers. However, the design of a more robust ECC needs to provide information on the distribution of threshold voltages in different operating modes. [0003] Traditional NAND Flash threshold voltage distribution prediction techniques...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34
Inventor 杜刚王坤亮刘晓彦
Owner PEKING UNIV