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Ultra-low noise, highly stable single-mode operation, high power semiconductor laser based on Bragg grating

A technology of Bragg gratings and lasers, applied in semiconductor lasers, lasers, phonon exciters, etc., can solve problems such as insufficient support for high-performance systems

Active Publication Date: 2021-08-31
MORTON HYBRID LASERS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing semiconductor-based laser systems cannot adequately support high-performance systems with all of the above requirements

Method used

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  • Ultra-low noise, highly stable single-mode operation, high power semiconductor laser based on Bragg grating
  • Ultra-low noise, highly stable single-mode operation, high power semiconductor laser based on Bragg grating
  • Ultra-low noise, highly stable single-mode operation, high power semiconductor laser based on Bragg grating

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Embodiment Construction

[0019] The description of illustrative embodiments in accordance with the principles of the invention should be read with reference to the accompanying drawings, which are considered a part of this entire written document. In describing embodiments of the inventive invention disclosed herein, any reference to direction or orientation is for convenience of description only and is not intended to limit the scope of the invention in any way. Relative terms such as "below", "upper", "horizontal", "vertical", "above", "below", "upward", "downward", "top" and "bottom" and Derived terms thereof, (eg, "horizontally," "downwardly," "upwardly," etc.) should be construed to refer to the direction described or shown in the figure in question. These relative terms are for convenience of description only and do not require that the device be constructed or operated in a particular orientation unless expressly indicated otherwise. Unless expressly described otherwise, terms such as "attache...

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Abstract

A kind of laser, comprises: gain chip; The external cavity that comprises Bragg grating; And substrate; Wherein the first end of described gain chip has the high reflectivity surface that forms the first end of laser cavity; The second of described gain chip The end has a low reflectivity end face; the second part of the external cavity includes a Bragg grating supported by a substrate whose temperature is maintained by a feedback loop; wherein the optical length of the external cavity is at least longer than the optical length of the gain chip The length is an order of magnitude larger; wherein the physical length of the Bragg grating is very long and accounts for most of the length of the external cavity, and apodization is performed to control the side mode of the grating reflection.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation of U.S. Patent Application 15 / 683,380 filed August 22, 2017, to which this application claims priority and the benefit of U.S. Provisional Patent Application 62 / 377,760, filed August 22, 2016. Both of the aforementioned documents are incorporated herein by reference in their entirety. technical field [0003] The present invention relates generally to semiconductor lasers, and more particularly to ultra-low noise, narrow linewidth, highly stable single longitudinal mode operation, high power, Bragg grating-based semiconductor lasers. Background technique [0004] Ultra-low-noise lasers including narrow-linewidth modes of operation, such as lasers with a linewidth of about 1 kHz to as low as 1 Hz, are often required to support high-performance optical communication systems and sensing systems, as well as support low relative intensity noise (RIN) operation, eg, <-155dB / Hz. High po...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/14
CPCH01S5/141H01S5/02415H01S5/02438H01S5/02476H01S5/1225H01S5/146H01S5/1039H01S2301/163H01S5/0612H01S5/0687G02B6/4271G02B6/02176H01S5/028H01S5/125
Inventor P·A·莫顿
Owner MORTON HYBRID LASERS LLC