On-chip integrated cascade amplification semiconductor laser

Abstract

The invention discloses an on-chip integrated cascade amplification semiconductor laser. The on-chip integrated cascade amplification semiconductor laser comprises a ridge type area, an on-chip DBR grating structure, a tapered type area and an epitaxial waveguide; the DBR grating structure is arranged on the ridge type area, the ridge type area is a ridge type waveguide structure, the tapered typearea is a gain waveguide structure; the epitaxial waveguide has a first-order ladder thickness; the ridge type area is arranged at a thin side of the epitaxial waveguide, the tapered type area is arranged at a thick side of the epitaxial waveguide, and the ridge type area and the tapered type area are cascaded. The laser of the design can more sufficiently utilize the tapered type area gain in comparison with a laser amplification way of traditionally utilizing the tapered gain structure; the base model feature is maintained when the mode volume is extended based on the iso-luminous flux principle, the optical quality of the near diffraction limit laser is guaranteed, and the brightness is greatly improved.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to an on-chip integrated cascaded amplifier semiconductor laser. Background technique [0002] With the innovation of technology, high-power semiconductor laser chip (LD) develops rapidly, and it has been widely used as a pump light source in civil and military fields. Especially in recent years, its development momentum as a fiber laser pump source is extremely rapid. As fiber lasers continue to increase the output brightness requirements of semiconductor laser pump sources, the number of traditional pigtail pump source coupled semiconductor laser chips is close to the physical limit, and continuing to increase the output brightness can only increase the brightness of the chip. In addition, realizing direct output of high-brightness semiconductor lasers through high-quality and high-efficiency common-aperture beam combining is also one of the important ways to study a new gener...

AI Technical Summary

Problems solved by technology

Affected by cavity surface damage, nonlinear effects, etc., the current maximum output power of 100μm wide chips is limited to about 30W. To continue to increase output power, it is urgent to carry out innovative research on chip design.

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