A four-junction solar cell structure with high radiation resistance and its preparation method
A technology of solar cells and irradiation, applied in the field of solar cells, can solve problems affecting battery stability and service life, normal operation of batteries, serious problems, etc.
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[0049] A method for preparing a four-junction solar cell structure with high radiation resistance, characterized in that it comprises the following steps:
[0050] Step 1. Using metal-organic chemical vapor deposition technology, sequentially grow GaInP corrosion stop layer, take-off layer, thin GaInP battery, (AlGa) on the gallium arsenide substrate 1-x In x As / (AlGa) 1-y In y As DBR, first tunnel junction, thin GaAs cell, (AlGa) 1-x In x As / (AlGa) 1-y In y As DBR, graded buffer layer, second tunnel junction, thin first junction In x Ga 1-x As battery, (AlGa) 1-x In x As / (AlGa) 1-y In y As DBR, graded buffer layer, third tunnel junction, thin second junction In x Ga 1-x As battery;
[0051]Step 2. Prepare an omnidirectional reflector on the surface of the thin four-junction epitaxial layer, use plasma-enhanced chemical vapor deposition technology to grow the dielectric layer, and use photolithography and chemical etching technology to etch periodic micropores on...
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[0074] image 3It is a structural schematic diagram of a four-junction solar cell with high radiation resistance of the present invention. A four-junction solar cell structure with high radiation resistance includes a metal thin film substrate and a high-reflectivity metal layer arranged in sequence , dielectric layer, thin four-junction epitaxial layer.
[0075] figure 1 It is a structural schematic diagram of a thin four-junction epitaxial layer structure of a four-junction solar cell structure with high radiation resistance in the present invention; the thin four-junction epitaxial layer includes a cap layer, a thin GaInP cell, (AlGa) 1- x In x As / (AlGa) 1-y In y As DBR, first tunnel junction, thin GaAs cells, (AlGa) 1-x In x As / (AlGa) 1-y In y AsDBR, graded buffer layer, second tunnel junction, thin first junction In x Ga 1-x As battery, (AlGa) 1-x In x As / (AlGa) 1-y In y AsDBR, graded buffer layer, third tunnel junction, thin second junction In x Ga 1-x A...
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