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A four-junction solar cell structure with high radiation resistance and its preparation method

A technology of solar cells and irradiation, applied in the field of solar cells, can solve problems affecting battery stability and service life, normal operation of batteries, serious problems, etc.

Active Publication Date: 2021-04-20
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because the space environment is not as mild as the ground environment, there are harsh conditions such as ultraviolet light and plasma, which will have a significant impact on the normal operation of the battery
Although the battery is protected by a glass cover, which can block dust, atomic oxygen, and low-energy protons, the glass cover cannot completely shield high-energy protons and high-energy electrons.
These high-energy particles will cause the battery's electrical performance to decline, thereby affecting the battery's stability and service life
[0003] Although the lattice-mismatched four-junction solar cell based on the design idea of ​​"band gap matching" improves the photoelectric conversion efficiency compared with the triple-junction solar cell by optimizing the distribution of sub-cell band gaps in the solar spectrum, the lattice mismatch The structure also makes the radiation damage of the battery more serious

Method used

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  • A four-junction solar cell structure with high radiation resistance and its preparation method
  • A four-junction solar cell structure with high radiation resistance and its preparation method
  • A four-junction solar cell structure with high radiation resistance and its preparation method

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preparation example Construction

[0049] A method for preparing a four-junction solar cell structure with high radiation resistance, characterized in that it comprises the following steps:

[0050] Step 1. Using metal-organic chemical vapor deposition technology, sequentially grow GaInP corrosion stop layer, take-off layer, thin GaInP battery, (AlGa) on the gallium arsenide substrate 1-x In x As / (AlGa) 1-y In y As DBR, first tunnel junction, thin GaAs cell, (AlGa) 1-x In x As / (AlGa) 1-y In y As DBR, graded buffer layer, second tunnel junction, thin first junction In x Ga 1-x As battery, (AlGa) 1-x In x As / (AlGa) 1-y In y As DBR, graded buffer layer, third tunnel junction, thin second junction In x Ga 1-x As battery;

[0051]Step 2. Prepare an omnidirectional reflector on the surface of the thin four-junction epitaxial layer, use plasma-enhanced chemical vapor deposition technology to grow the dielectric layer, and use photolithography and chemical etching technology to etch periodic micropores on...

Embodiment 1

[0074] image 3It is a structural schematic diagram of a four-junction solar cell with high radiation resistance of the present invention. A four-junction solar cell structure with high radiation resistance includes a metal thin film substrate and a high-reflectivity metal layer arranged in sequence , dielectric layer, thin four-junction epitaxial layer.

[0075] figure 1 It is a structural schematic diagram of a thin four-junction epitaxial layer structure of a four-junction solar cell structure with high radiation resistance in the present invention; the thin four-junction epitaxial layer includes a cap layer, a thin GaInP cell, (AlGa) 1- x In x As / (AlGa) 1-y In y As DBR, first tunnel junction, thin GaAs cells, (AlGa) 1-x In x As / (AlGa) 1-y In y AsDBR, graded buffer layer, second tunnel junction, thin first junction In x Ga 1-x As battery, (AlGa) 1-x In x As / (AlGa) 1-y In y AsDBR, graded buffer layer, third tunnel junction, thin second junction In x Ga 1-x A...

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Abstract

The invention relates to a four-junction solar cell structure with high radiation resistance and a preparation method thereof. The structure comprises a metal thin film substrate, a high-reflectivity metal layer, a dielectric layer, and a thin four-junction epitaxial layer arranged in sequence; the method includes adopting Thin four-junction epitaxial layer is prepared by metal-organic chemical vapor deposition technology; an omnidirectional reflector is prepared on the surface of the epitaxial wafer, and a dielectric layer is grown by plasma-enhanced chemical vapor deposition technology, and periodic micropores are etched on the dielectric layer. The metal material with high reflectivity is deposited on the surface; the metal thin film substrate is prepared on the surface of the omnidirectional reflector by electroplating technology; the gallium arsenide substrate and the GaInP corrosion stop layer are respectively removed by chemical etching. Beneficial effects of the present invention: the thickness of the four sub-batteries is greatly reduced, the loss of charged particle radiation to the four-junction battery is greatly reduced, the defect density is reduced, and the radiation resistance of the four-junction battery is improved, thereby promoting the four-junction Application of batteries in aerospace field.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a four-junction solar cell structure with high radiation resistance and a preparation method thereof. Background technique [0002] Efficiency is the inevitable development direction of satellite solar cells. High-efficiency solar cells can increase the output power without significantly increasing the weight of the battery array, so that more payloads can be added to the satellite and the utilization rate of the satellite can be improved. However, because the space environment is not as mild as the ground environment, there are harsh conditions such as ultraviolet light and plasma, which will have a significant impact on the normal operation of the battery. Although the battery is protected by a glass cover, which can block dust, atomic oxygen, and low-energy protons, the glass cover cannot completely shield high-energy protons and high-energy electrons. These high-energy particles ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0687H01L31/0693H01L31/054H01L31/18
CPCY02E10/52Y02E10/544Y02P70/50
Inventor 薛超高鹏姚立勇姜明序张无迪刘丽蕊王宇
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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