Unlock instant, AI-driven research and patent intelligence for your innovation.
A four-junction solar cell structure with high radiation resistance and its preparation method
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of solar cells and irradiation, applied in the field of solar cells, can solve problems affecting battery stability and service life, normal operation of batteries, serious problems, etc.
Active Publication Date: 2021-04-20
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
View PDF6 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
However, because the space environment is not as mild as the ground environment, there are harsh conditions such as ultraviolet light and plasma, which will have a significant impact on the normal operation of the battery
Although the battery is protected by a glass cover, which can block dust, atomic oxygen, and low-energy protons, the glass cover cannot completely shield high-energy protons and high-energy electrons.
These high-energy particles will cause the battery's electrical performance to decline, thereby affecting the battery's stability and service life
[0003] Although the lattice-mismatched four-junction solar cell based on the design idea of "band gap matching" improves the photoelectric conversion efficiency compared with the triple-junction solar cell by optimizing the distribution of sub-cell band gaps in the solar spectrum, the lattice mismatch The structure also makes the radiation damage of the battery more serious
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
preparation example Construction
[0049] A method for preparing a four-junction solar cell structure with high radiation resistance, characterized in that it comprises the following steps:
[0050] Step 1. Using metal-organic chemical vapor deposition technology, sequentially grow GaInP corrosion stop layer, take-off layer, thin GaInP battery, (AlGa) on the gallium arsenide substrate 1-x In x As / (AlGa) 1-y In y As DBR, first tunnel junction, thin GaAs cell, (AlGa) 1-x In x As / (AlGa) 1-y In y As DBR, graded buffer layer, second tunnel junction, thin first junction In x Ga 1-x As battery, (AlGa) 1-x In x As / (AlGa) 1-y In y As DBR, graded buffer layer, third tunnel junction, thin second junction In x Ga 1-x As battery;
[0051]Step 2. Prepare an omnidirectional reflector on the surface of the thin four-junction epitaxial layer, use plasma-enhanced chemical vapor deposition technology to grow the dielectric layer, and use photolithography and chemical etching technology to etch periodic micropores on...
Embodiment 1
[0074] image 3It is a structural schematic diagram of a four-junction solar cell with high radiation resistance of the present invention. A four-junction solar cell structure with high radiation resistance includes a metal thin film substrate and a high-reflectivity metal layer arranged in sequence , dielectric layer, thin four-junction epitaxial layer.
[0075] figure 1 It is a structural schematic diagram of a thin four-junction epitaxial layer structure of a four-junction solar cell structure with high radiation resistance in the present invention; the thin four-junction epitaxial layer includes a cap layer, a thin GaInP cell, (AlGa) 1- x In x As / (AlGa) 1-y In y As DBR, first tunnel junction, thin GaAs cells, (AlGa) 1-x In x As / (AlGa) 1-y In y AsDBR, graded buffer layer, second tunnel junction, thin first junction In x Ga 1-x As battery, (AlGa) 1-x In x As / (AlGa) 1-y In y AsDBR, graded buffer layer, third tunnel junction, thin second junction In x Ga 1-x A...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
thickness
aaaaa
aaaaa
thickness
aaaaa
aaaaa
thickness
aaaaa
aaaaa
Login to View More
Abstract
The invention relates to a four-junction solar cell structure with high radiation resistance and a preparation method thereof. The structure comprises a metal thin film substrate, a high-reflectivity metal layer, a dielectric layer, and a thin four-junction epitaxial layer arranged in sequence; the method includes adopting Thin four-junction epitaxial layer is prepared by metal-organic chemical vapor deposition technology; an omnidirectional reflector is prepared on the surface of the epitaxial wafer, and a dielectric layer is grown by plasma-enhanced chemical vapor deposition technology, and periodic micropores are etched on the dielectric layer. The metal material with high reflectivity is deposited on the surface; the metal thin film substrate is prepared on the surface of the omnidirectional reflector by electroplating technology; the gallium arsenide substrate and the GaInP corrosion stop layer are respectively removed by chemical etching. Beneficial effects of the present invention: the thickness of the four sub-batteries is greatly reduced, the loss of charged particle radiation to the four-junction battery is greatly reduced, the defect density is reduced, and the radiation resistance of the four-junction battery is improved, thereby promoting the four-junction Application of batteries in aerospace field.
Description
technical field [0001] The invention belongs to the field of solar cells, in particular to a four-junction solar cell structure with high radiation resistance and a preparation method thereof. Background technique [0002] Efficiency is the inevitable development direction of satellite solar cells. High-efficiency solar cells can increase the output power without significantly increasing the weight of the battery array, so that more payloads can be added to the satellite and the utilization rate of the satellite can be improved. However, because the space environment is not as mild as the ground environment, there are harsh conditions such as ultraviolet light and plasma, which will have a significant impact on the normal operation of the battery. Although the battery is protected by a glass cover, which can block dust, atomic oxygen, and low-energy protons, the glass cover cannot completely shield high-energy protons and high-energy electrons. These high-energy particles ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.