Method for preparing superhigh-purity germanium polycrystal

Abstract

The invention provides a method for preparing superhigh-purity germanium polycrystal, and provides a method for preparing superhigh-purity germanium polycrystal for effectively increasing the purity of germanium polycrystal. The preparation method is applied to a germanium polycrystal preparation device. The device comprises a quartz boat, a quartz tube, a zone-melting coil, a bracket, an air inlet pipe, an exhaust pipe and a zone-melting trolley, wherein the quartz boat is put in the quartz tube; the zone-melting coil is arranged on the bracket; the quartz tube is fixed on the bracket and positioned among the zone-melting coil; the air inlet pipe and the exhaust pipe are respectively arranged at two ends of the quartz tube; the zone-melting trolley is arranged under the quartz tube; a silicon smoke coating is coated on the inner surface of the quartz boat; the zone-melting coil is a coil which is prepared from a copper tube with the diameter of 12mm and has three inner circles and twoouter circles; and the zone-melting coil has a width of 3cm. The novel germanium polycrystal preparation device is used for performing zone-melting purification, and the high-purity germanium polycrystal has relatively stable purity after repeated zone-melting purification, and the germanium polycrystal purity can be effectively improved.

Description

technical field [0001] The invention relates to the preparation of germanium polycrystalline, in particular to a preparation method of ultra-high purity germanium polycrystalline which can effectively improve the purity of germanium polycrystalline by multiple zone melting. Background technique [0002] Germanium can be used as a semiconductor material and is widely used in the manufacture of diodes, triodes and integrated circuits. Germanium can also be used to make infrared optical devices and solar cells. As a material for high-purity germanium nuclear radiation detectors, one of the most important properties is that the net impurity concentration with electrical activity should be less than 2x10 10 cm -3 . Using the usual semiconductor material process, the material from chemical purification to 5-6 9 purity can only be purified to 9-10 9 purity by conventional zone melting, because various materials and equipment are in complex chemical environment. It is difficult t...

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Problems solved by technology

[0004] What the present invention aims to solve is the problem that the zone melting method adopted cannot effectively improve the purity of germanium polycrystals under the premise of existing instruments and gas media, and provides a germanium polycrystal that can effectively improve the purity of germanium polycrystals through multiple zone melting. Crystal ultra-high purity preparation method

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