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Optically driven logic device based on barium titanate-based ferroelectric film, and application method thereof

A ferroelectric thin film and light-driven technology, applied in the field of logic devices, can solve problems such as limiting the application environment, and achieve good application prospects and small size

Inactive Publication Date: 2019-07-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to propose a light-driven logic device based on bismuth titanate-based ferroelectric thin film and its application method, to solve the problem that traditional light-driven logic devices can only be applied to fluid systems and limit its application environment question

Method used

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  • Optically driven logic device based on barium titanate-based ferroelectric film, and application method thereof
  • Optically driven logic device based on barium titanate-based ferroelectric film, and application method thereof
  • Optically driven logic device based on barium titanate-based ferroelectric film, and application method thereof

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Embodiment

[0043] In order to obtain a BIT ferroelectric film with good photoelectric properties, the following means are used to prepare a BIT ferroelectric film in this embodiment:

[0044] Step 1. Use the sol-gel method to configure the precursor BIT sol;

[0045] Using bismuth nitrate, tetrabutyl titanate as raw materials, glacial acetic acid, ethylene glycol methyl ether, and acetylacetone as solvents, the process is as follows:

[0046] ① Weigh 5.336g of bismuth nitrate and dissolve it in a mixed solution of 15ml of glacial acetic acid and 15ml of ethylene glycol methyl ether, heat in a water bath at 80°C and stir until completely dissolved to obtain solution A;

[0047] ② Dissolve 2.55g of tetrabutyl titanate in 2g of acetylacetone and sonicate until orange-red to obtain solution B; ③ Slowly pour solution B into solution A with stirring, and then add a certain amount of ethylene glycol Methyl ether makes the total volume of the solution 50ml, stirs for 12h, and prepares a BIT sol...

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Abstract

The invention relates to a logic device, and discloses an optically driven logic device based on a barium titanate-based ferroelectric film, and an application method thereof. The problem that traditional optically driven logic devices only can be applied to the fluid system and restrict the application environment is solved. The optically driven logic device comprises a double-sided transparent conductive substrate and BIT films produced at two sides of the double-sided transparent conductive substrate, and the BIT films at two sides are serially connected as the output for the optically driven logic device. Compared with traditional optically driven logic device material systems, the optically driven logic device based on the barium titanate-based ferroelectric film has the advantages ofall solid state, small size, solving of the problem that traditional optically driven logic devices only can be applied to the fluid system, and good application prospect.

Description

technical field [0001] The invention relates to a logic device, in particular to a light-driven logic device based on a bismuth titanate-based ferroelectric thin film and an application method thereof. Background technique [0002] Due to their unique properties, such as piezoelectric, ferroelectric, pyroelectric and other excellent properties, ferroelectric materials have broad application prospects in the fields of ultrasonic sensors, infrared light detection and pyroelectric detectors, and have become an international research field for new functional materials. One of the hot spots. As early as 1956, the photovoltaic effect of ferroelectric materials was discovered for the first time in BaTiO3 ferroelectric ceramics. Since then, ferroelectric photovoltaic materials have received more and more attention. Soon after, the researchers discovered the photovoltaic effect in ferroelectric ceramic materials such as PZT and LiNbO3. With the development of thin film electronics ...

Claims

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Application Information

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IPC IPC(8): C03C17/34
CPCC03C17/3417C03C2218/113C03C2218/116C03C2218/32
Inventor 何泓材张青赵强任静郭甜何伟徐飞陈昱锜
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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