Static random access memory circuit structure for realizing Hamming distance calculation in memory

A technology of memory circuit and Hamming distance, which is applied in the field of static random access memory circuit structure, can solve the problems of increased computing energy consumption, complex scheme structure, and low computing efficiency, and achieve energy reduction, efficiency and speed improvement, and simple circuit structure Effect

Active Publication Date: 2019-07-05
ANHUI UNIVERSITY
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Problems solved by technology

[0009] However, the scheme structure of the above-mentioned prior art is relatively complicated, a

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  • Static random access memory circuit structure for realizing Hamming distance calculation in memory
  • Static random access memory circuit structure for realizing Hamming distance calculation in memory
  • Static random access memory circuit structure for realizing Hamming distance calculation in memory

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[0024] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

[0025] The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings. A static random access memory circuit structure for realizing Hamming distance calculation in a memory, characterized in that the circuit structure comprises a static random access memory SRAM array (Memory Array) with N rows and N columns, and a comparison module is included on the periphery of the SRAM array (Comparator ...

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Abstract

The invention discloses a static random access memory circuit structure for realizing Hamming distance calculation in a memory. The circuit structure comprises a static random access memory (SRAM) array with N rows and N columns. An original code and an inverse code of a target binary data to be processed are stored in N columns and N bits of storage arrays of the SRAM array respectively, the N bits of binary data compared with the original code and the inverse code of the target binary data to be processed are stored in a word line signal WLL, and the N bits of binary data of the comparison data are stored in a word line signal WLR in an inverse code mode; bit line signals are reduced to VDD-Vx by bit line pulse modulation, preventing the stored data in the unit from overturning; and calculating the Hamming distance of the N columns through the sum of the BL and BLB discharge amounts of the bit line signals in each column, thereby calculating the Hamming distance of the N-bit binary data and the N-bit comparison data. The circuit is simple in structure, the operation efficiency and speed can be effectively improved, and energy consumed in the transmission process is reduced.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a static random access memory circuit structure for realizing Hamming distance calculation in memory. Background technique [0002] At present, with the rapid development of application fields such as machine learning, image recognition, and edge computing, these fields need to process massive amounts of data and require high computing energy efficiency. The traditional traditional von Neumann architecture separates the processor computing unit from the memory. The processor reads data from the memory when needed, and then writes it back to the memory after the processor has processed the data. Due to the rapid development of Moore's Law, the running speed of the memory is not synchronized with the speed of the processor, and the access speed of the memory is seriously lagging behind the computing speed of the processor. The performance of the memory has become an imp...

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Application Information

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IPC IPC(8): G11C11/412G11C11/418
CPCG11C11/412G11C11/418
Inventor 蔺智挺欧阳春吴秀龙彭春雨黎轩卢文娟谢军陈崇貌黎力
Owner ANHUI UNIVERSITY
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