Cross section measurement method of atmospheric neutron single event effects under low probability conditions
A single-event effect and atmospheric neutron technology, applied in electronic circuit testing, non-contact circuit testing, etc., can solve the problem of long-time irradiation test, achieve good resistance to atmospheric neutron single-event effect, and shorten the test time. , the effect of reducing development costs
Active Publication Date: 2021-12-24
NORTHWEST INST OF NUCLEAR TECH
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[0004] In order to solve the technical problem that the radiation test of the traditional measurement system takes a long time under the condition of low probability, the invention provides a method for measuring the cross section of atmospheric neutron single event effect under the condition of low probability
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[0042] In order to make the purpose, content and advantages of the present invention clearer, the present invention will be further described below in conjunction with the accompanying drawings.
[0043] refer to figure 1 As shown, the atmospheric neutron single event effect cross-section measurement system under low probability conditions provided by the present invention includes a test board, an irradiation board (on which the SRAM memory 1 and the SRAM storage bar 2 to be tested are arranged) and a computer. The test board is connected to m (m≥1) irradiated boards and placed in an atmospheric neutron environment. The i (i=1,2,...,m) irradiated board is integrated with n i (n i ≥1) SRAM memory sticks, wherein, the jth (j=1,2,...,n i ) SRAM memory sticks are integrated with h j (h j≥1) SRAM memories, that is, each irradiation board can have one or more SRAM memory bars, and each SRAM memory bar is integrated with one or more SRAM memories. The type of SRAM memory integr...
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In order to solve the technical problem that the radiation test of the traditional measurement system takes a long time under the low probability condition, the present invention provides a measurement system and method for the atmospheric neutron single event effect cross section under the low probability condition. Among them, the measurement system includes an irradiation board, a test board and a computer; there are m irradiation boards, m≥1; the i-th irradiation board is integrated with n i A socket for inserting the SRAM storage bar to be tested, i=1, 2,..., m, n i ≥1; the test board is connected with m irradiation boards, and is used to monitor the working status of each SRAM storage bar on the m irradiation boards, and send the monitored single event effect data to the computer; the single event The effect data includes the number of single event flips and single event latches; the computer is connected to the test board to obtain and process the test data sent by the test board, and obtain the measured SRAM memory on the SRAM storage bar to be tested in the atmospheric neutron environment single event effect cross section.
Description
technical field [0001] The invention relates to a method for measuring the cross-section of atmospheric neutron single-event effects under low-probability conditions. The low probability mentioned in the present invention is relative to the accelerator environment in the ground simulation test, because the atmospheric environment includes the adjacent space, and the flux of neutrons is several orders of magnitude smaller than that of the accelerator in the ground simulation test. Background technique [0002] Cosmic rays and solar flares, etc., interact directly or indirectly with the atmosphere to produce atmospheric neutrons, which have energies ranging from MeV to GeV. When atmospheric neutrons are incident on a semiconductor device, a large number of electron-hole pairs will be generated, and these electron-hole pairs can be collected by the sensitive reverse-biased PN junction in the semiconductor device, so that the logic state of the circuit is reversed and the stored...
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IPC IPC(8): G01R31/302
CPCG01R31/302
Inventor 王勋郭晓强张凤祁陈伟丁李利罗尹虹
Owner NORTHWEST INST OF NUCLEAR TECH