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Solid-state drive device and data read-write method based on solid-state drive device

A solid-state drive and data writing technology, which is applied in the direction of electrical digital data processing, instruments, memory systems, etc., can solve the problems of deterioration of the durability of flash memory

Pending Publication Date: 2019-07-09
INFOMICRO ELECTRONICS SHENZHEN
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Based on this, in order to solve the above-mentioned technical problem of durability deterioration of the flash memory, a solid-state drive device and a method for reading and writing data based on the solid-state drive are provided.

Method used

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  • Solid-state drive device and data read-write method based on solid-state drive device
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  • Solid-state drive device and data read-write method based on solid-state drive device

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Embodiment Construction

[0142] The following instructions are intended to enable a general technique to be made and used in the context of a specific application and its requirements. Various modifications to the preferred examples will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other examples. Therefore, the technology is not intended to be limited to the specific examples of implementation shown and described, but is to be applied to the widest possible use consistent with the principles and novel features disclosed herein.

[0143] See figure 1 , which provides a schematic structural diagram of a solid-state drive according to an embodiment of the present invention. Such as figure 1 Shown, this GNSD driver 1 comprises: GNSD controller 10, flash memory conversion layer 20, flash memory 30 (abbreviated as flash memory), solid state hard drive dynamic random access memory (Solid State Drive Dynamic Random Access Memory, SSD DRAM) 40,...

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Abstract

The embodiment of the invention discloses GNSD (Global Navigation Satellite System) solid-state drive equipment and a data read-write method based on the same, and the solid-state drive equipment comprises a flash memory for storing first data, an SSD DRAM used for storing the mapping table and the second data; a DRAM translation layer (DTL) used for controlling access to the SSD DRAM; a controller used for determining that the read data is stored in the SSD DRAM and / or the flash memory according to the mapping table when the host reads the data and also used for storing the written data intothe SSD DRAM or the flash memory according to the number of the available DRAM entries in the mapping table when the host writes the data. By adopting the method and the device, the writing and erasing times of the flash memory can be effectively controlled, so that the durability of the flash memory is improved.

Description

technical field [0001] The invention relates to the technical field of flash memory, in particular to a solid-state drive device and a data reading and writing method based on the solid-state drive. Background technique [0002] Flash memory is widely used for external storage of computer systems and for primary storage of portable devices. Flash memory (flash memory), invented by Dr. Fujio Masuoka of Toshiba in 1987, uses an Electrically Erasable Programmable Read-Only Memory (EEPROM) cell that stores charges on a floating gate. The cell is typically programmed with an avalanche current and then erased using quantum mechanical tunneling through a thin layer of oxide. Unfortunately, some electrons may be trapped in the thin oxide layer during programming or erasing. These trapped electrons reduce the charge stored in the cell during subsequent programming cycles, assuming a constant programming voltage. Therefore, it is often necessary to increase the programming voltage ...

Claims

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Application Information

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IPC IPC(8): G06F12/1009G06F12/0873
CPCG06F12/1009G06F12/0873
Inventor 俞一康马治刚陈希孟张耀泽周燕
Owner INFOMICRO ELECTRONICS SHENZHEN
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