Silicon etchant composition having low selection ratio (Si (100)/Si (111)) for two crystal lattice directions and low silica etching rate

Abstract

The present invention is directed to a special silicon etchant composition having a low selectivity ratio (Si(100)/Si(111)) for two lattice directions and a low silicon oxide etch rate, which is suitable for use in a semiconductor manufacturing process, and includes From about 0.5% by weight to about 5% by weight, based on the total weight of the etchant composition, of at least one quaternary ammonium hydroxide, from about 5% by weight to about 55% by weight of at least one primary amine compound, about 15% by weight to 80% by weight of at least one polyol compound, and from about 10% to 35%by weight of an aqueous medium. The composition preferentially etches silicon present on the substrate as compared to the silica present on the substrate.

Description

technical field [0001] The present invention relates to an etchant composition, and in particular to a silicon etchant composition having low selectivity to two lattice directions (Si(100) / Si(111)) and protective silicon dioxide function, the etchant composition of the present invention can be applied to integrated circuits. Background technique [0002] The gate fabrication process in the semiconductor manufacturing process is one of the key factors affecting the performance of transistors. The gate length (Gate length) represents the line width of the semiconductor manufacturing process, which follows the reduction of Moore's law to achieve the goals of low power consumption, improved computing performance, and reduced component size to increase production capacity. Due to its smallest line width, the associated manufacturing process also requires the most special etchant. The definition of gate pattern is mainly based on dry etching, which has the advantage of good anis...

AI Technical Summary

Problems solved by technology

[0003] Traditionally, when using simple TMAH solution to etch Silicon, the selection ratio of Si(100) / Si(111) in the lattice direction is mostly more than 30. For SiO 2 The etch rate of Above, the silicon dioxide structure cannot be effectively protected, so it cannot be applied in the advanced semiconductor manufacturing process

[0004] Most of the current silicon etching solution formulations in the market do not have the function of protecting silicon dioxide, nor do they take into account the low steric barrier chemical molecules required in high aspect ratio structures, resulting in the inability to complete silicon etching within an effective time, resulting in silicon residues and prolonged etching. time, the silicon dioxide layer is damaged