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High-voltage deep-trench superjunction MOSFET structure and manufacture method

A fabrication method and deep trench technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as difficulty in reaching and withstanding voltage limitations.

Pending Publication Date: 2019-07-12
WUXI TONGFANG MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The super junction structure replaces the N-type drift region by alternately arranged P-type columns and N-type columns. The withstand voltage of the device is mainly determined by the length of the P-type columns and the total charge. The longer the P-type columns, the higher the breakdown voltage. High, but limited by the process capability, the P-type column of the super junction cannot be infinitely long, so the withstand voltage capability is also limited. For ultra-high voltage power MOSFET devices, it is currently difficult to achieve

Method used

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  • High-voltage deep-trench superjunction MOSFET structure and manufacture method
  • High-voltage deep-trench superjunction MOSFET structure and manufacture method
  • High-voltage deep-trench superjunction MOSFET structure and manufacture method

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Embodiment 1

[0032] Embodiment 1: Taking an N-type planar gate super-junction MOSFET device as an example, the first conductivity type is N-type, the second conductivity type is P-type, a structure of a high-voltage deep-trench super-junction MOSFET, in the top view plane Above, the semiconductor device includes an active region and a terminal region surrounding the active region;

[0033] The active region includes several superjunction device units connected in parallel, including a number of superjunction device units connected in parallel, and the superjunction device unit includes an N-type first epitaxial layer 2 and an N-type first epitaxial layer 2 The N-type substrate 1 below is provided with an N-type second epitaxial layer 3 on the N-type first epitaxial layer 2, and a P-type body region 4 is provided in the N-type second epitaxial layer 3, and the A P-type column 6 is provided under the P-type body region 4, and the P-type column 6 extends from the bottom of the P-type body reg...

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Abstract

The invention belongs to the technical field of manufacturing semiconductor devices, and relates to a high-voltage deep-trench superjunction MOSFET structure. A superjunction device unit comprises a first conductive type of first epitaxial layer and a first conductive type of substrate, wherein the first conductive type of first epitaxial layer is provided with a first conductive type of second epitaxial layer; a second conductive type of body region is disposed in the first conductive type of second epitaxial layer; a second conductive type of pillar is disposed under the second conductive type of body region; the second conductive type of pillar extends from the bottom of the second conductive type of body region through the first conductive type of second epitaxial layer to the first conductive type of first epitaxial layer; and the depth of the second conductive type of pillar inserted into the first conductive type of first epitaxial layer does not exceed 5[mu]m. The two epitaxiallayers of different resistivities are grown by multiple epitaxial processes. By adjusting the depth of the P-type pillar inserted into the N-type first epitaxial layer, and the resistivities and thethicknesses of the N-type first epitaxial layer and N-type second epitaxial layer, a higher voltage withstand capability can be achieved.

Description

technical field [0001] The invention relates to a super-junction MOSFET structure and a manufacturing method thereof, in particular to a high-voltage deep trench type super-junction MOSFET structure and a manufacturing method thereof, and belongs to the technical field of manufacturing semiconductor devices. Background technique [0002] The on-resistance of traditional power MOSFET devices is mainly determined by the length and doping concentration of the drift region. The smaller the length of the drift region, the smaller the on-resistance, and the higher the doping concentration of the drift region, the smaller the on-resistance. However, changes in these two aspects will lead to a decrease in the breakdown voltage of the device, so the on-resistance and the breakdown voltage are in a contradictory relationship or a compromise relationship, that is, the reduction of the on-resistance is limited by the breakdown voltage. [0003] The emergence of superjunction structures ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/7802H01L29/0634H01L29/66712
Inventor 薛璐王颖菲张海涛
Owner WUXI TONGFANG MICROELECTRONICS