2results about How to "Improve total pressure efficiency" patented technology

The utility model provides an exhaust light guide device which comprises an exhaust assembly, a light guide assembly, a solar photovoltaic panel, an electric exhauster or a lighting lamp and the like, the exhaust assembly comprises an air guide exhaust cover and a ventilation light guide pipe, and the light guide assembly comprises a lighting protective cover and a ventilation light guide pipe. The air guide exhaust hood and the ventilation light guide pipe have a flow guide effect on incoming flow and generate negative pressure exhaust at the exhaust port; when sunlight, wind or no wind exists, the lighting protective cover and the ventilation light guide pipe can guide external light into a room, and meanwhile the solar photovoltaic panel generates electricity and drives the electric exhaust fan to exhaust air or supply energy to the illuminating lamp through the control circuit. The device can utilize natural wind power, solar energy and indoor hot air buoyancy to exhaust or illuminate, airflow does not flow backwards, and the device is simple in structure, high in wind resistance, low in cost, long in service life, low in noise and high in exhaust efficiency. The device is used for places where structures need exhausting, lighting or ventilation and heat dissipation.

The application provides a semiconductor device, a manufacturing method of the semiconductor device and an electronic device. A first field plate polysilicon in a groove is arranged in a plurality of L-shaped structures arranged in layers, and a voltage division cascade groove field plate structure is formed by connecting the first field plate polysilicons in the same layer through a voltage division ring. In this way, by increasing the number of voltage division cascade field plates in the unit groove depth, the electric field distribution in the drift region can be closer to a rectangular distribution, higher voltage resistance efficiency can be achieved, the area of the active region drift region can be increased, the resistivity of the drift region can be reduced, and the current density of the device can be improved.