Through-silicon contact structure and method of forming the same

Abstract

In a TSC structure, a first dielectric layer is formed over a first major surface of a substrate. The substrate includes an opposing second major surface. A TSC is formed in the first dielectric layer and the substrate such that the TSC extends through the first dielectric layer and into the substrate. A conductive plate electrically coupled to the TSC is formed over the first dielectric layer. An isolation trench is formed in the substrate to surround and be spaced from the conductive plate. A second dielectric layer is formed on the second major surface of the substrate. A first plurality of vias extending into the substrate and connected to the TSC are formed in the second dielectric layer. A second plurality of vias extending into the substrate, but not connected to the TSC, are formed in the second dielectric layer.

Description

Background technique [0001] Through silicon contacts (TSCs) are widely used in the semiconductor industry. A TSC is a vertical electrical connection that runs completely through the silicon wafer or die. TSC technology is important in creating 3D packages and 3D integrated circuits. TSCs provide interconnection of vertically aligned electronic devices by significantly reducing the complexity and overall size of internal wiring of multi-chip electronic circuits. TSC technology offers higher interconnect and device densities and shorter connection lengths than conventional packaging technologies. [0002] An associated TSC structure includes a TSC opening through a substrate, a barrier layer formed along sidewalls of the TSC opening, and a conductive material filled in the TSC opening. As the critical dimensions of semiconductor devices in integrated circuits shrink to achieve higher device densities and faster operating speeds, the RC delay introduced by the associated TSC s...

AI Technical Summary

Problems solved by technology

As the critical dimensions of semiconductor devices in integrated circuits shrink to achieve higher device densities and faster operating speeds, the RC delay introduced by the associated TSC structure will become a major problem

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