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Double-channel TFT structure

A dual-channel, metal-layer technology, used in the manufacture of transistors, electrical components, semiconductor/solid-state devices, etc., to improve mobility and reduce overall size

Pending Publication Date: 2019-07-23
FUJIAN HUAJIACAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Compared with LTPS, IGZO also has certain deficiencies, especially the current mobility of IGZO is lower than LTPS, so to achieve the required current, a larger TFT size is often required, which is very important for narrow bezel panel design. disadvantage

Method used

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Experimental program
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Embodiment 1

[0042] The present invention provides a double-channel TFT structure, including a glass substrate 1, a first metal layer 2, a first insulating layer 3, a first semiconductor layer 4, a second metal layer 5, The second insulating layer 6 and the third metal layer 7; the first gate of the TFT is set in the first metal layer 2, the source of the TFT and the drain of the TFT are respectively set in the second metal layer 5, The second gate of the TFT is arranged in the third metal layer 7 .

Embodiment 2

[0044] The difference between Embodiment 2 of the present invention and Embodiment 1 is that the above-mentioned double-channel TFT structure further includes an etching stopper layer 8, a first silicon nitride layer 15, gate driving lines, and source driving lines. and drain drive lines;

[0045] The semiconductor layer and the second metal layer 5 are respectively embedded in the etching barrier layer 8, and the lower surface of the etching barrier layer 8 is connected to the upper surface of the first insulating layer 3;

[0046] A first through hole 9 is provided in the middle of the upper surface of the second metal layer 5, and the first through hole 9 separates the second metal layer 5 into a first sub-metal layer 10 and a second sub-metal layer 11;

[0047] The first through hole 9 is provided with a second semiconductor layer 12, the left side of the second semiconductor layer 12 is connected to the first sub-metal layer 10, and the right side of the second semiconduc...

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Abstract

The invention discloses a double-channel TFT structure. The double-channel TFT structure comprises a glass substrate, a first metal layer, a first insulating layer, a first semiconductor layer, a second metal layer, a second insulating layer and a third metal layer which are sequentially stacked from bottom to top, wherein the first grid electrode of the TFT is arranged in the first metal layer; the source electrode of the TFT and the drain electrode of the TFT are arranged in the second metal layer separately; and the second grid electrode of the TFT is arranged in the third metal layer. By virtue of the double-channel TFT structure provided by the invention, the current between the source electrode and the drain electrode of the TFT can be increased.

Description

technical field [0001] The invention relates to the technical field of TFTs, in particular to a double-channel TFT structure. Background technique [0002] IGZO is an amorphous oxide containing indium, gallium and zinc. The carrier mobility is 20 to 30 times that of amorphous silicon. It can greatly improve the charge and discharge rate of TFT to the pixel electrode, improve the response speed of the pixel, and achieve a higher The fast refresh rate and faster response also greatly increase the row scanning rate of pixels, making ultra-high resolution possible in TFT-LCD, which is generally used as a semiconductor layer in TFT. In addition, IGZO displays have higher energy efficiency levels and are more efficient due to the reduced number of transistors and increased light transmittance per pixel. IGZO can be produced using existing amorphous silicon production lines with minor changes, so it is more competitive with low-temperature polysilicon in terms of cost. [0003] C...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336H01L29/10
CPCH01L29/78606H01L29/786H01L29/66462H01L29/10
Inventor 不公告发明人
Owner FUJIAN HUAJIACAI CO LTD