Wafer double-sided macroscopic observation device and system
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 上海新创达半导体设备技术有限公司
- Publication Date
- 2019-08-02
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Abstract
Description
technical field
[0001] The invention relates to the technical field of wafer detection, in particular to a wafer double-sided macro observation device and system. Background technique
[0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor), Mosfet (Metal Oxide Semiconductor Field-Effect Transistor, Metal Oxide Semiconductor Field-Effect Transistor), and microphone devices in the semiconductor industry usually use ultra-thin wafers. For devices, the chip thickness needs to be reduced to 100-200 μm, or even to 80 μm. After the wafer is ground to the current thickness, subsequent processing is more difficult, especially for large silicon wafers larger than 8 inches, which are easily broken and more difficult to operate.
[0003] Existing wafer macroscopic observation devices usually adopt the principle of vacuum adsorption, for example, vacuum adsorption observation devices are composed of vacuum chucks, rotating and flipping mechanisms. Through t...