Wafer double-sided macroscopic observation device and system

Abstract

The invention discloses a wafer double-sided macroscopic observation device and system, and relates to the technical field of wafer inspection. The device comprises a base provided with a first support plate and a second support plate, wherein a turning disk is disposed between the support plate and the second support plate, and the turning disk is connected to the first support plate or the second support plate through a connecting shaft and is rotatably connected to the first support plate and the second support plate in the axial direction of the connecting shaft; the turning disk is provided with a rotating disk that is rotatably connected to the turning disk along the axial direction thereof, the axis of the rotating disk is vertical to the axis of the turning disk, and the turning disk is provided with a rotating mechanism for driving the rotation of the rotating disk; the rotating disk is provided with an opening and closing mechanism that is internally provided with a pressingplate for pressing the wafer against the rotating disk, and the pressing plate is disposed on the rotating disk in a circumferential direction of the rotating disk; a first observing opening is defined on the turning disk, and a second observing opening is defined on the rotating disk. The wafer double-sided macroscopic observation device and system reduce the possibility of wafer damage and increase the reliability during wafer observation.

Description

technical field [0001] The invention relates to the technical field of wafer detection, in particular to a wafer double-sided macro observation device and system. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor), Mosfet (Metal Oxide Semiconductor Field-Effect Transistor, Metal Oxide Semiconductor Field-Effect Transistor), and microphone devices in the semiconductor industry usually use ultra-thin wafers. For devices, the chip thickness needs to be reduced to 100-200 μm, or even to 80 μm. After the wafer is ground to the current thickness, subsequent processing is more difficult, especially for large silicon wafers larger than 8 inches, which are easily broken and more difficult to operate. [0003] Existing wafer macroscopic observation devices usually adopt the principle of vacuum adsorption, for example, vacuum adsorption observation devices are composed of vacuum chucks, rotating and flipping mechanisms. Through t...

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Problems solved by technology

[0005] However, when the above two macroscopic observation devices are aimed at thinned wafers, the vacuum chuck has poor adsorption effect on thinned and warped wafers, and large-scale non-wafer surface horizontal movements such as flipping and rotating are likely to cause wafers to slip. resulting in fragmentation

Moreover, vacuum adsorption itself needs to be in contact with the wafer surface, which is likely to cause wafer contamination; while the edge clamping device is clamped along the radial direction of the wafer, and its radial bearing capacity is extremely weak for thinned wafers. Therefore, the edge diameter Clamping in the opposite direction can easily cause the wafer to deform and fall off, or even break into pieces

[0006] The above two wafer macro observation devices and wafer fixing methods are relatively destructive to ultra-thin and highly warped wafers, and the reliability of wafer observation is low

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