Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device

A semiconductor and conductive technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as inability to fully suppress capacitance, inability to fully obtain on-off loss, etc.

Active Publication Date: 2019-08-02
MITSUBISHI ELECTRIC CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, according to the studies of the present inventors, in the technology described in the above publication, the capacitance related to the portion of the gate electrode that does not contribute to the formation of the channel region cannot be sufficiently suppressed, and as a result, the channel cannot be sufficiently obtained. The effect of reducing the breaking loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0034] (structure)

[0035] figure 1 It is a partial perspective view schematically showing the structure of the active region of the IGBT 91 (semiconductor device) in the first embodiment. In addition, in figure 1 In the drawings, the illustration of the gate insulating film 5 on the flat portion of the upper surface P1 of the semiconductor substrate 10 is omitted for the convenience of viewing the drawings. figure 2 It is a partial perspective view showing the structure of the IGBT 91 , and the illustration of the structure above the plane including the flat portion is omitted. image 3 yes means figure 2 A partial top view of the upper surface. Figure 4 is along figure 1 Partial sectional view of the line IV-IV.

[0036] IGBT 91 of Embodiment 1 includes semiconductor substrate 10 , gate insulating film 5 (insulating film), gate electrode 21 , emitter electrode 31 (first main electrode), and collector electrode 32 (second main electrode). In addition, IGBT 91 may i...

Embodiment approach 2

[0064] (structure)

[0065] Figure 9 It is a partial perspective view schematically showing the structure of the active region of the IGBT 92 (semiconductor device) in the second embodiment. In addition, in Figure 9 In the drawings, the illustration of the gate insulating film 5 on the flat portion of the upper surface P1 of the semiconductor substrate 10 is omitted for the convenience of viewing the drawings. Figure 10 It is a partial perspective view showing the structure of the IGBT 92 , and the illustration of the structure above the plane including the flat portion is omitted. Figure 11 yes means Figure 10 A partial top view of the upper surface. Figure 12 is along Figure 9 Partial sectional view of line XII-XII.

[0066] In the IGBT 92 (semiconductor device) of Embodiment 2, the p-type base region 12 is provided only on a part of the drift layer 11 in the active region. The p-type base region 12 can be in the length direction ( Figure 11 in the longitudin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device which can reduce the total loss through avoiding a sharp increase in break-over voltage and reducing on-off loss. Trenches (TR) each have longer sides (SL) extending in a longitudinal direction, and shorter sides (SS) linking the longer sides (SL) together. The trenches (TR) are periodically arranged in the longitudinal direction and a transverse direction. A first region (12) is on a drift layer (11) of a first conductivity type, has a second conductivity type, and is penetrated by the trenches (TR). A second region (13) is on the first region (12) so as to be away fromthe drift layer (11), has the first conductivity type, and is in contact with the longer sides (SL) of each of the trenches (TR) so as to be away from the ends of the longer sides (SL). A third region (14) is on the first region (12), has the second conductivity type, and has a higher impurity concentration than the first region (12). The gate electrode (21) is in the trench (TR) with a gate insulating film (5) interposed therebetween.

Description

technical field [0001] The present invention relates to semiconductor devices, in particular to power semiconductor devices having a gate electrode insulated from a semiconductor substrate. Background technique [0002] Driven by the energy-saving movement spreading globally, expectations for the reduction of power consumption of power conversion devices are very high. It is the power device that plays a key role in the power conversion device. Currently, in power devices, the Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Tr ans i s tor: IGBT) is more widely used. In particular, a trench-type IGBT can easily obtain a low ON voltage by arranging channels at a high density (details will be described later). Therefore, the trench type IGBT is suitable for reducing power consumption. Next, an example of the structure and operation of an IGBT having a trench gate structure will be described. [0003] In order to obtain the structure of the IGBT, prepare to have ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/7397H01L29/0684H01L29/0696H01L29/42376H01L29/417H01L29/66348
Inventor 中谷贵洋
Owner MITSUBISHI ELECTRIC CORP