Light emitting element, light emitting element array and light emitting device thereof

Abstract

The invention provides a light emitting device. The light emitting device is provided with a substrate which includes a control circuit. The light emitting device comprises a light emitting element with a semiconductor layer sequence. The semiconductor layer sequence comprises a first-type semiconductor layer, a second-type semiconductor layer and an active light emitting layer between the first-type semiconductor layer and the second-type semiconductor layer. The light emitting device has shielding layers which are distributed at periphery of the light emitting element. The light emitting element is connected with the control circuit of the substrate. The light emitting element utilizes or is going to utilize a substrate stripping process by laser. The shielding layers prevent working abnormities of the light emitting device cased by control circuit damage by the laser in substrate stripping.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a light emitting element, an array of light emitting elements and a light emitting device thereof. Background technique [0002] In the current market, light-emitting devices are showing a trend of miniaturization in size and spacing. Ultra-fine-pitch light-emitting devices have higher pixels and better market prospects. Gallium nitride thin film LED structure needs to use laser lift-off technology to remove the sapphire substrate, but the laser energy will penetrate the sapphire substrate during removal, and the laser will be transmitted to the underlying control circuit board, causing damage to the circuit, resulting in poor product yield good. Contents of the invention [0003] The present invention proposes a feasible solution to the problems in the background technology, through which a high-yield light-emitting element can be obtained. [0004] The...

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Problems solved by technology

[0002]In the current market, light-emitting devices are showing a trend of miniaturization in size and pitch, and ultra-fine-pitch light-emitting devices have higher pixels and better market prospects. In the case of ultra-fine-pitch light-emitting devices, such as the fabrication of gallium nitride thin-film LED structures with circuit substrates, laser lift-off technology is required to remove the sapphire substrate, but the laser energy will penetrate the sapphire substrate during removal, and the laser is transmitted to The bottom control circuit board causes damage to the circuit, resulting in poor product yield

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