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Preparation method of reversed polarity AlGaInP quaternary LED chip

A technology of LED chips and LED epitaxial wafers, applied in the field of optoelectronics, can solve the problems of low output matching rate, unstable process, long manufacturing process of quaternary LED chips, etc., and achieve high matching rate and high matching rate. Effect

Active Publication Date: 2019-08-13
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this patent, the operation is carried out after confirming the relevant dimensions. Due to the long manufacturing process of the reverse polarity AlGaInP quaternary LED chip, the possibility of process instability is greater, and the final output matching rate is slightly lower.

Method used

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  • Preparation method of reversed polarity AlGaInP quaternary LED chip
  • Preparation method of reversed polarity AlGaInP quaternary LED chip
  • Preparation method of reversed polarity AlGaInP quaternary LED chip

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Embodiment 1

[0040] A method for preparing a reverse polarity AlGaInP quaternary LED chip, comprising:

[0041] (1) Prepare the P-side ohmic contact layer and the current blocking layer sequentially on the P-side of the reverse polarity AlGaInP quaternary LED epitaxial wafer by conventional methods; the reverse polarity AlGaInP quaternary LED epitaxial wafer includes the GaAs substrate sequentially from bottom to top , barrier layer GaInP, opaque epitaxial layer, N-type AlGaInP layer, reverse polarity quaternary LED epitaxial layer;

[0042] (2) The epitaxial wafer generated in step (1) is bonded to a single crystal conductive Si substrate or a sapphire substrate by a conventional bonding process;

[0043] (3) Use a conventional GaAs substrate etching solution to etch and remove the GaAs substrate, use a conventional GaInP etching solution to etch away the epitaxially grown barrier layer GaInP, and prepare an N-side ohmic contact electrode pattern on the opaque epitaxial layer, and the N-s...

Embodiment 2

[0056] According to the method for preparing a reverse polarity AlGaInP quaternary LED chip described in Example 1, the feature is that the interval period between the centers of two adjacent small units is 80-150 μm. The width of the linear electrode pattern is 8-15 μm.

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Abstract

The invention relates to a preparation method of a reversed polarity AlGaInP quaternary LED chip. The preparation method comprises the following steps: (1) sequentially preparing a P surface ohmic contact layer and a current blocking layer on a P surface of a reversed polarity AlGaInP quaternary LED epitaxial wafer; (2) bonding to a single crystal conductive Si substrate or a sapphire substrate; (3) removing a GaAs substrate and the barrier layer, and preparing an N-surface ohmic contact electrode pattern which comprises a plurality of small units which are regularly distributed and are sequentially connected through linear electrode patterns; (4) removing the linear electrode patterns formed by connecting the four small units with the surrounding small unit electrode patterns; and (5) carrying out point measurement on the four small units, combining a plurality of small unit electrode patterns according to customer requirements, and removing linear electrode patterns between the smallunit electrode patterns which do not need to be reserved according to the sizes of the combined electrode patterns. The gear alignment rate is high.

Description

technical field [0001] The invention relates to a method for preparing a reverse polarity AlGaInP quaternary LED chip, which belongs to the field of optoelectronic technology. Background technique [0002] LED is a new light source for lighting in the 21st century. Under the same brightness, the power consumption of semiconductor lamps is only 1 / 10 of that of ordinary incandescent lamps, but the life span can be extended by 100 times. The LED device is a cold light source with high luminous efficiency, low working voltage, low power consumption, small size, flat packaging, easy to develop thin and light products, strong structure and long life. The light source itself does not contain harmful substances such as mercury and lead. No infrared and ultraviolet pollution, no pollution to the outside world during production and use. Therefore, semiconductor lamps have the characteristics of energy saving, environmental protection, and long life. Just like transistors replace elec...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/38
CPCH01L33/0093H01L33/387
Inventor 李晓明单立英任忠祥徐现刚肖成峰
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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