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Bonding structure and manufacturing method thereof

A manufacturing method and bonding structure technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems such as splitting and reducing bonding strength between wafers

Active Publication Date: 2020-10-30
WUHAN XINXIN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the implementation of wafer-level packaging technology, it is necessary to ensure that the bonding interface between the wafers is completely bonded and there are no gaps during the bonding process, otherwise the bonding strength between the wafers will be reduced, and there will be problems in subsequent thinning or other processes. splinter risk

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  • Bonding structure and manufacturing method thereof
  • Bonding structure and manufacturing method thereof
  • Bonding structure and manufacturing method thereof

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Embodiment Construction

[0031] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings.

[0032] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do it without violating the content of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0033] Secondly, the present application is described in detail in combination with schematic diagrams. When describing the embodiments of the present application in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged...

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Abstract

The present application provides a bonding structure and a manufacturing method thereof. When bonding the nth wafer to the n-1th wafer, the first edge trimming can be performed from the bonding surface of the nth wafer. , the width of the first edge trimming is W n , as n increases, the first edge trimming width can gradually increase, this is because the edge of the wafer is usually not smooth enough, resulting in gaps in the wafer during bonding, after edge trimming of the wafer, The uneven part at the edge of the n-th wafer can be removed, and the bonding surface of the n-th wafer faces the bonding surface of the n-1-th wafer, and the n-th wafer and the n-1-th Wafer bonding, reducing the possibility of gaps between wafer bonding interfaces, improving the bonding strength between wafers, and then thinning the n-th wafer substrate to form the n-1th wafer stack , due to the stronger bonding strength between adjacent wafers, the resulting wafer stack has higher reliability and lower risk of splitting.

Description

technical field [0001] The present application relates to the field of semiconductor devices and its manufacture, in particular to a bonding structure and its manufacturing method. Background technique [0002] With the continuous development of semiconductor technology, 3D-IC (three-dimensional integrated circuit) technology has been widely used. It uses wafer-level packaging technology to stack and bond wafers with different functions. This technology has high performance and low cost. Advantages of low cost and high integration. [0003] In the implementation of wafer-level packaging technology, it is necessary to ensure that the bonding interface between the wafers is completely bonded and there are no gaps during the bonding process, otherwise the bonding strength between the wafers will be reduced, and there will be problems in subsequent thinning or other processes. Risk of splintering. Contents of the invention [0004] In view of this, the object of the present ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/603H01L23/48
CPCH01L24/82H01L24/08H01L21/02016H01L21/02021H01L2224/82895H01L2224/08145H01L2224/80895H01L2224/80896H01L2224/94H01L2224/8013H01L2224/09181H01L24/94H01L24/80H01L25/18H01L25/16H01L2924/00014H01L2224/80001H01L24/27H01L24/32H01L2924/3512
Inventor 曾甜
Owner WUHAN XINXIN SEMICON MFG CO LTD
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