Unlock instant, AI-driven research and patent intelligence for your innovation.

Design method of ultra-thin spin valve device

A design method and spin valve technology, applied in the selection of materials, magnetic field-controlled resistors, manufacturing/processing of electromagnetic devices, etc., can solve the problems of difficulty and reduction in thickness, achieve reduction in thickness, increase magnetic storage density, The effect of increasing the switching ratio

Active Publication Date: 2019-08-30
QUZHOU UNIV
View PDF9 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, it is difficult to significantly reduce its thickness based on the existing design

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Design method of ultra-thin spin valve device
  • Design method of ultra-thin spin valve device
  • Design method of ultra-thin spin valve device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific embodiments.

[0016] refer to figure 2 and image 3 , this specific embodiment adopts the following technical solutions: an ultra-thin spin valve device, referring to figure 2 , the specific embodiment adopts the following technical solutions: an ultra-thin spin valve device, including a free layer 1, a pinned layer 2 and an antiferromagnetic layer 3, the free layer 1 is adjacent to the pinned layer 2, the pinned layer 2 and the antiferromagnetic layer The ferromagnetic layer 3 is adjacent, and the free layer 1 and the pinned layer 2 are both made of two-dimensional rare earth magnetic materials. The antiferromagnetic layer adopts traditional materials such as FeMn, IrMn, NiMn and PtMn.

[0017] It is worth noting that the overall thickness of the free lay...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a design method of an ultra-thin spin valve device and relates to the technical field of an electronic device. A free layer, a pinned layer and an antiferromagnetic layer are included, wherein the free layer is adjacent to the pinned layer, the pinned layer is adjacent to the antiferromagnetic layer, the free layer and the pinned layer are both made of a two-dimensional rare earth semi-metal magnetic material, and the antiferromagnetic layer adopts conventional materials such as FeMn, IrMn, NiMn, and PtMn. The method is advantaged in that an ultra-thin spin valve is manufactured through utilizing the two-dimensional rare earth semi-metal magnetic material, sensitivity of the spin valve is improved, the thickness of the spin valve is reduced to lower than 2 nm and isone third of thickness of spin valves which are now commonly used, an insulation layer is omitted, and thereby the spin preparation process is simplified.

Description

technical field [0001] The invention relates to the technical field of electronic devices, in particular to a design method for an ultra-thin spin valve device with a high switching ratio. Background technique [0002] As we all know, the storage space of current smart phones and mobile hard disks is getting larger and larger, which has greatly improved people's living standards. This is mainly due to the spin valve, an important electronic device. The current general spin valve structure is as follows: figure 1 As shown, it consists of a spin-tunable ferromagnetic layer, a spacer layer, a spin-fixed ferromagnetic layer, and an antiferromagnetic layer. The ferromagnetic layer material is usually Fe. The antiferromagnetic layer usually chooses FeMn, IrMn, NiMn, PtMn, CoO and NiO, etc. The antiferromagnetic layer and the ferromagnetic layer form a heterojunction, and there is a strong magnetic coupling between them, which can effectively fix the spin direction of the pinne...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12H10N50/10H10N50/01
CPCH10N50/10H10N50/01H10N50/85
Inventor 杨建辉梁兴赵怀远王安萍张绍政
Owner QUZHOU UNIV