Chip processing method

A processing method and chip technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as controllability and thinning of difficult chips, and achieve the effect of avoiding over-corrosion or under-corrosion and reducing energy requirements

Active Publication Date: 2019-09-06
CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the current process is difficult to controllably and effectively thin the chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chip processing method
  • Chip processing method
  • Chip processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0046] It should ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a chip processing method and relates to the technical field of semiconductor device processing. The provided chip processing method can reduce the thickness of a chip to the thickness meeting ground single-particle effect test after steps of leveling, primary thinning and secondary thinning and the like of the chip on a printed-circuit board; and through such physical thinning, the case of chip deformation caused by chip re-welding in the operation process of thinning first and welding later can be avoided, and meanwhile, the case of over-corrosion or under-corrosion easily occurring in chemical thinning process is avoided. Even if the low-energy heavy ions, which are low in energy, are used, the single-particle effect test can also be carried out on the thinned chip, thereby reducing energy requirements for a heavy-ion accelerator in the single-particle effect test.

Description

technical field [0001] The present application relates to the field of semiconductor device processing, in particular, to a chip processing method. Background technique [0002] The single event effect refers to a radiation effect that causes abnormal changes in the state of the device when a single high-energy particle passes through the sensitive area of ​​the microelectronic device, including single event flipping, single event locking, single event burning, single event gate breakdown, etc. In the field of aerospace technology, various semiconductor devices in aerospace equipment in space will be affected by high-energy particles in space and cause single event effects. In order to understand the response of aerospace equipment under the influence of high-energy particles, it is necessary to conduct single event effect tests on aerospace equipment during the manufacturing process of aerospace equipment. In the single event effect test, the low-energy heavy ions produced...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304
CPCH01L21/304
Inventor 梁朝辉方亮林晓玲田万春杨颖
Owner CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products