A kind of Bragg reflector based on bn(al) thin film and its preparation method

A technology of Bragg reflectors and thin films, applied in mirrors, sputtering coatings, instruments, etc., can solve problems such as low luminous efficiency, poor thermal conductivity, and difficult to effectively control different central wavelengths

Active Publication Date: 2020-10-27
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, optoelectronic devices based on nitride materials, such as green LEDs and ultraviolet LEDs, have the problem of low luminous efficiency. However, the DBR prepared by using existing semiconductor materials has small refractive index difference, poor thermal conductivity and preparation process. High requirements make it difficult to effectively control different central wavelengths, especially for green light, ultraviolet and other bands

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  • A kind of Bragg reflector based on bn(al) thin film and its preparation method
  • A kind of Bragg reflector based on bn(al) thin film and its preparation method
  • A kind of Bragg reflector based on bn(al) thin film and its preparation method

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Embodiment approach

[0040] In order to better understand the solutions of the present invention, the present invention will be further described in detail below in conjunction with specific embodiments.

[0041] Boron nitride (BN) has excellent electrical insulation, excellent chemical stability and excellent dielectric properties, and has been paid more and more attention by scientific researchers. BN is a wide bandgap semiconductor material, which has great application potential in semiconductor light-emitting devices. On the other hand, magnetron sputtering technology, one of the most important coating industrial methods at present, can prepare almost all metals, alloys and ceramic materials. Dual power sputtering method is adopted, one power source sputters the hexagonal BN target, and the other power source sputters the metal Al target. By adjusting the sputtering power, BAlN with precise and constant ratio can be deposited, and at the same time, the sputtering coating can be accurately cont...

Embodiment 1

[0044] Based on a silicon substrate, a thin-film periodic structure in a Bragg mirror is fabricated as follows:

[0045] (1) Silicon substrate cleaning: heat the 311 (hydrogen peroxide and sulfuric acid 3:1 mixture) solution and soak at 180°C for 15-20 minutes, then immerse the silicon substrate in absolute ethanol for ultrasonic cleaning for 15 minutes, and then rinse with deionized water three times Finally, blow dry with nitrogen to remove impurities attached to the surface of the silicon substrate.

[0046] (2) Sputtering: Send the clean silicon substrate into the sputtering chamber to heat up, and the temperature rise rate does not exceed 10°C / min. Set the preset temperature to 600°C, and the holding time is not less than the sputtering time (in this case, the holding time is set to 6h) to ensure the stability of the temperature of the chamber and the substrate. A dual power supply magnetron sputtering method is adopted, with high-purity hexagonal BN target material (99....

Embodiment 2

[0050] see figure 2 , based on the preparation process parameters of a thin film periodic structure BN / BAlN thin film, the thickness is 71nm / 83nm respectively, the thickness of a thin film periodic structure is 154nm, the thickness of 1 / 4 wavelength is 140nm, and the number of preparation cycles is 5, the wavelength range can be obtained in 450nm In the range of -650nm, the reflectivity reaches more than 33%.

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Abstract

The invention provides a Bragg reflecting mirror based on a BN(Al) film, and a preparation method. The Bragg reflecting mirror comprises a substrate, wherein the surface of the substrate is provided with S pieces of film periodic structures, S is an integer and is greater than or equal to 1, and the film periodic structures comprise a BN low-refractive-index layer and a BAlN high-refractive-indexlayer arranged on the BN low-refractive-index layer. The preparation method for the Bragg reflecting mirror comprises the following steps that: (1) heating a clean substrate in a cavity; (2) only starting a BN target material power supply, and sputtering one layer of BN film on the surface of the substrate; (3) keeping the power of the BN target material power supply to be constant, starting an Altarget material power supply, and sputtering one layer of BAlN film; and (4) when S is greater than 1, repeating S(2) and S(3) to realize the preparation of the Bragg reflecting mirror with a plurality of thin film periodic structures. The preparation method is simple, thin film flatness is high, the Bragg reflecting mirror with the plurality of thin film periodic structures can be prepared, andlarge-area industrialized preparation can be realized.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices and functional thin films, and in particular relates to a Bragg reflector based on a BN (Al) thin film and a preparation method thereof. Background technique [0002] Distributed Bragg reflector (DBR) is a periodic structure composed of two materials with different refractive indices arranged alternately, and the optical thickness of each layer of material is 1 / 4 of the central reflection wavelength. In optoelectronics, Bragg mirrors are widely used in light emitting diodes (LEDs), vertical cavity surface emitting semiconductor lasers (VCSELs), vertical external cavity surface emitting semiconductor lasers (VECSELs), and F-P cavity light modulators. Common applications in recent years such as: SiO 2 / TiO 2 The prepared DBR is used as a reflector in the flip-chip white LED structure to improve the radiation power of the device; the Al 0.6 Ga 0.4 The composite DBR structure pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/08C23C14/06C23C14/35
CPCC23C14/06C23C14/0647C23C14/352G02B5/085
Inventor 李强张启凡秦潇云峰
Owner XI AN JIAOTONG UNIV
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