Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Image sensor, reading circuit thereof and pixel structure

An image sensor and readout circuit technology, which is applied in the field of image sensors, can solve the problems of not being able to meet the requirements of image quality and the low dynamic range of image sensors, and achieve the effects of convenient conversion gain, improved dynamic range, and easy realization

Active Publication Date: 2019-09-13
BRIGATES MICROELECTRONICS KUNSHAN
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the dynamic range of existing CMOS image sensors is still low and cannot meet the requirements for image quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor, reading circuit thereof and pixel structure
  • Image sensor, reading circuit thereof and pixel structure
  • Image sensor, reading circuit thereof and pixel structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] The CMOS image sensor includes a pixel array, a pixel readout circuit array coupled to the pixel array, and a digital processing circuit. Wherein, the pixel array is composed of several pixel circuits distributed in an array, and the pixel readout circuit array is composed of several readout circuits distributed in an array. Pixel circuits in the same column are output by the same bit line, and are coupled to a readout circuit. The pixel array converts the received optical signal into an analog electrical signal, and the readout circuit array converts the analog electrical signal into a digital electrical signal, which is then output to a digital processing circuit for subsequent processing.

[0060] figure 1 It is a circuit structure of a 4T pixel circuit composed of four CMOS transistors in the prior art. refer to figure 1 , the 4T pixel circuit may include: a photodiode PD, a first MOS transistor N1, a second MOS transistor N2, a third MOS transistor N3 and a four...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an image sensor, a reading circuit thereof and a pixel structure. The reading circuit comprises an analog-to-digital conversion circuit which is coupled with a pixel circuit ofthe CMOS image sensor and is suitable for quantifying an output signal of the pixel circuit to obtain a corresponding digital signal; and a conversion gain control circuit, coupled with the pixel circuit and suitable for generating a corresponding pixel circuit control signal based on the swing amplitude of the signal output by the pixel circuit when the signal output by the pixel circuit is an image signal so as to control the conversion gain of the pixel circuit. By applying the scheme, the dynamic range of the image sensor can be expanded.

Description

technical field [0001] The invention relates to the field of image sensors, in particular to an image sensor, a readout circuit, and a pixel structure thereof. Background technique [0002] A Complementary Metal Oxide Semiconductor (CMOS) image sensor is a semiconductor device that converts optical signals into electrical signals. Generally, a CMOS image sensor includes a pixel array, a pixel readout circuit array coupled to the pixel array, and a digital processing circuit. Wherein, the pixel array is composed of several pixel circuits distributed in an array, and the pixel readout circuit array is composed of several readout circuits distributed in an array. [0003] Pixel circuits in the same column are output by the same bit line, and are coupled to a readout circuit. The pixel array converts the received optical signal into an analog electrical signal, and the readout circuit array converts the analog electrical signal into a digital electrical signal, which is then o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H04N5/374H04N5/378
CPCH04N25/76H04N25/75
Inventor 张琦韩磊
Owner BRIGATES MICROELECTRONICS KUNSHAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products