Film bulk acoustic resonator and preparation method thereof
A thin-film bulk acoustic wave and resonator technology, applied in the field of resonators, can solve the problems of acoustic energy leakage, incomplete acoustic impedance mismatch, etc., achieve high frequency stability, improve Q value, and reduce loss
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2019-10-08
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Abstract
Description
technical field
[0001] The invention relates to a resonator, in particular to a film bulk acoustic wave resonator and a preparation method thereof. Background technique
[0002] At present, the most mainstream implementation methods of radio frequency filters are Surface Acoustic Wave (Surface Acoustic Wave, SAW) filters and filters based on Film Bulk Acoustic Resonator (Film Bulk Acoustic Resonator, FBAR) technology. Due to its own limitations, the SAW filter is more suitable for use below 1.5GHz. However, the current wireless communication protocol has long used a frequency band greater than 2.5GHz, and at this time a filter based on FBAR technology must be used.
[0003] There are many structures and preparation methods of FBAR devices. In the past structures and preparation methods, silicon is often used as the support structure, PSG is used as the sacrificial layer material, and finally an air gap is formed by etching the PSG sacrificial layer. In an ideal situation, ...
Examples
Embodiment Construction
[0061] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0062] Such as figure 1 As shown, the first aspect of the present invention is a thin film bulk acoustic resonator manufacturing method S100, which specifically includes the following steps:
[0063] S110, providing a first substrate and a second substrate;
[0064] S120, forming a first groove on the first substrate;
[0065] S130. Form at least one set of longitudinal Bragg reflection gratings on the second substrate, each set of longitudinal Bragg reflection gratings includes at least two thin film material layers with different acoustic impedances;
[0066] S140, bonding the side of the second substrate provided with the longitudinal Bragg grating to the side of the first substrate provided with the first groove;
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