FBAR (film bulk acoustic resonator) substrate and preparation method thereof

A thin-film bulk acoustic wave and resonator technology, applied in electrical components, impedance networks, etc., can solve problems such as damage to semiconductor chips, semiconductor CMOS process incompatibility, high substrate temperature, etc., and achieve good frequency stability.

Inactive Publication Date: 2013-02-13
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the substrate temperature required for the preparation of Si3N4 thin films is relatively high, generally 800-1000°C
However, when FBAR is integrated on the semiconductor chip, the temperature of the entire process of preparing FBAR should not exceed 400°C, otherwise the channel structure of the semiconductor chip will be destroyed, so the Si3N4 film as a support layer is not compatible with the semiconductor CMOS process in terms of preparation temperature; Si3N4 thin film Soluble in HF acid, and HF acid is often used in the cleaning process of semiconductor chip preparation, so Si3N4 film as a support layer is not compatible with semicondu

Method used

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  • FBAR (film bulk acoustic resonator) substrate and preparation method thereof
  • FBAR (film bulk acoustic resonator) substrate and preparation method thereof
  • FBAR (film bulk acoustic resonator) substrate and preparation method thereof

Examples

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[0026] The new type of thin film bulk acoustic resonator FBAR substrate is firstly etched by electrochemical method on the selected part of the Si substrate 1 that is the air gap 7 of the mask to prepare porous silicon 2 as the air gap of the sacrificial layer; then prepare it on the porous silicon The diamond-like carbon film DLC is used as the support layer 3, which requires the use of a photoresist mask to ensure that the two sides of the diamond-like DLC film extend outside the porous silicon; the third is to prepare a W thin film on the DLC support layer as the bottom electrode 4; A high C-axis orientation aluminum nitride AlN piezoelectric layer 5 is prepared on the W film; the fifth is to prepare a W film on the aluminum nitride AlN piezoelectric layer as the top electrode 6; the sixth is to use the wet etching process in the IC process to corrode Remove the porous silicon and release the air gap 7 structure (such as figure 1 , 4 Shown).

[0027] Wherein, the surface of th...

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Abstract

The invention discloses a FBAR (film bulk acoustic resonator) substrate and a preparation method thereof. The FBAR substrate is of a W/piezoelectric film/W/ DLC/air gap/Si structure. The FBAR substrate with a W/piezoelectric film/W/ DLC/air gap/Si structure has the characteristics of high frequency, high Q (quality) and good frequency stability. The FBAR substrate can be used for manufacturing filters and duplexers and the like in wireless communication systems, and also can be used for manufacturing high-performance sensors in combination with sensitive films.

Description

【Technical field】 [0001] The invention relates to the cross-technical field of thin film electronic devices and micro-electromechanical systems (MEMS), in particular to a novel thin film bulk acoustic wave resonator substrate. 【Background technique】 [0002] Film Bulk Acoustic Wave Resonator (FBAR) can be divided into silicon backside etching type, air gap type, and solid-state device type. The ideal air-gap FBAR is a sandwich structure, that is, upper electrode / piezoelectric layer / lower electrode, and an air gap is etched between the silicon surface and the lower electrode surface of the FBAR to form an air interface. The actual air-gap FBAR resonator includes upper electrode / piezoelectric layer / lower electrode / support layer, and an air gap is etched between the silicon surface and the lower surface of the support layer to form an air interface, so that the upper and lower interfaces of the FBAR substrate An air reflection layer is formed, a standing wave is formed between...

Claims

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Application Information

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IPC IPC(8): H03H9/17H03H3/02
Inventor 杨保和张乾坤苏林徐晟
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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