Method for manufacturing active matrix substrate and method for manufacturing organic el display device
An active matrix and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as gate electrode oxidation, and achieve the effect of suppressing productivity decline
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Embodiment approach 1
[0027] (Schematic structure of organic EL display device 1)
[0028] First, use figure 1 and figure 2 , a schematic configuration of an organic EL display device 1 as an example of a display device using a TFT (Thin Film Transistor: thin film transistor) 7 according to an embodiment of the present invention will be described.
[0029] figure 1 It is a cross-sectional view showing the structure of the organic EL display device 1 according to Embodiment 1 of the present invention. Such as figure 1 As shown, the organic EL display device 1 includes: an organic EL substrate 2 encapsulated with a thin film (TFE: Thin Film Encapsulation); and a driving circuit (not shown). The organic EL display device 1 may further include a touch panel.
[0030] The organic EL display device 1 includes: a display area 5 for displaying an image in which pixels PIX are arranged in a matrix; and a frame area 6 that surrounds the display area 5 and is a peripheral area where no pixels PIX are ar...
Embodiment approach 2
[0113] Embodiment 2 of the present invention will be described below. For convenience of description, components having the same functions as those described in Embodiment 1 are given the same reference numerals, and description thereof will be omitted.
[0114] If using image 3 As explained above, in Embodiment 1, in the manufacturing method of the TFT substrate 40 , the annealing of the semiconductor layer 16 is not performed after the ion implantation process, but is performed in the interlayer film forming process.
[0115] In this embodiment, after the ion implantation step and before the interlayer film formation step, the substrate is heated at 300° C. to 430° C. in a furnace in which the oxygen concentration is lowered (annealing step). This prevents the surface of the gate electrode 18 from being oxidized during the annealing of the semiconductor layer 16 . After this annealing, the temperature in the furnace is gradually lowered, and then the substrate is taken ou...
Embodiment approach 3
[0120] Embodiment 3 of the present invention will be described below. For convenience of description, components having the same functions as those described in Embodiment 1 are given the same reference numerals, and description thereof will be omitted.
[0121] If using image 3As explained above, in Embodiment 1, in the manufacturing method of the TFT substrate 40 , the annealing of the semiconductor layer 16 is not performed after the ion implantation process, but is performed in the interlayer film forming process.
[0122] In this embodiment, after the ion implantation step and before the interlayer film formation step, the substrate is heated at 300° C. to 430° C. in an atmospheric pressure environment (annealing step).
[0123] Here, after the dry etching for forming the pattern of the gate electrode 18, plasma treatment using oxygen or nitrogen is performed, and therefore, the chlorine or fluorine used and remaining during the dry etching is removed from the surface o...
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