hemt structure and its manufacturing method

Abstract

The invention relates to an HEMT structure, which includes a substrate, a buffer layer with iron doping located on the substrate, a doping control layer located on the buffer layer, an unintentional doped layer located on the doping control layer, and a channel layer and a barrier layer located on the unintentional doped layer in turn. According to the HEMT structure and a manufacturing method thereof presented by the application, through the introduction of the doping control layer, the attenuation rate of the doping elements is increased, the thickness of the doped layer is reduced, and theinsulation effect of the buffer layer is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a HEMT structure and a manufacturing method thereof. Background technique [0002] As a representative of the third-generation semiconductor materials, gallium nitride (GaN) has many excellent characteristics, such as high critical breakdown electric field, high electron mobility, high two-dimensional electron gas concentration, and good high temperature working ability. Gallium nitride-based third-generation semiconductor devices, such as high electron mobility transistors (HEMTs) and heterostructure field effect transistors (HFETs), have been applied, especially in fields requiring high power and high frequency such as radio frequency and microwave has obvious advantages. [0003] In conventional HEMTs, in order to achieve the purpose of growing a high-resistance GaN layer to reduce the leakage of the buffer layer (buffer), doping (usually iron) is often pe...

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Problems solved by technology

This will lead to the following problems: 1) the thickness of the iron-doped layer is thick, which will bring great restrictions to the design of the device structure; in addition, the thicker GaN layer is not conducive to the heat dissipation of the device; 2) the iron-doped layer The concentration distribution of the impurity layer is not uniform: the difference between the iron concentration at the beginning stage and the iron concentration at the end stage can reach one to two orders of magnitude, resulting in insufficient insulation of the GaNbuffer layer

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