Method for manufacturing hafnium oxide film

Abstract

The invention discloses a method for manufacturing a hafnium oxide film, which comprises the steps of first, carrying out first surface treatment on a semiconductor substrate and forming hydroxyl distribution on the semiconductor substrate; second, placing the semiconductor substrate into a hafnium oxide film growth cavity, carrying out in-place second surface treatment, and enabling the hydroxylson the semiconductor substrate to be uniformly distributed by using the characteristic that the second surface treatment is in-place treatment; and third, growing the hafnium oxide film. According tothe invention, the uniformity of the hafnium oxide film can be improved, and the gate leakage can be reduced when the hafnium oxide film serves as a gate dielectric layer.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to a hafnium oxide (HfO 2 ) film manufacturing method. Background technique [0002] Compared with silicon oxide, hafnium oxide has a higher dielectric constant (HK), so in the field of semiconductor manufacturing, high dielectric constant materials composed of hafnium oxide are usually used as gate dielectric layers in logic circuits below 28nm, while The gate conductive material layer usually adopts a metal gate (MG). The gate structure composed of a gate dielectric layer of a high dielectric constant material and a metal gate is generally abbreviated as HKMG in the art. [0003] In the existing HKMG process, the hafnium oxide material has a relatively high dielectric coefficient, so the hafnium oxide used as the gate dielectric layer can solve the problem of excessive leakage current caused by thinning the gate dielectric layer. [0004] In existing methods, an atomic layer...

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Problems solved by technology

In the existing method, since the surface of the semiconductor substrate will be affected by the environment after the surface treatment is performed in step 1, the distribution of hydroxyl groups on the surface of the interface layer 102 on the semiconductor substrate 101 becomes indistinct. uniform, so the first atomic layer 103a also has a non-uniform structure, which also makes the subsequent formation of the second atomic layer 103b and the third atomic layer 103c all have a non-uniform structure, and finally makes the thickness of the formed hafnium oxide film 103 uneven

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