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Method and device for improving production efficiency of gate device with low line width

A production efficiency and gate technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as low production efficiency of low-line-width gate devices

Active Publication Date: 2019-11-08
福建省福联集成电路有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For this reason, it is necessary to provide a method and device for improving the production efficiency of low-line-width gate devices, so as to solve the problem of low production efficiency of low-line-width gate devices before improvement

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  • Method and device for improving production efficiency of gate device with low line width
  • Method and device for improving production efficiency of gate device with low line width
  • Method and device for improving production efficiency of gate device with low line width

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Embodiment Construction

[0081] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0082] see Figure 2 to Figure 8 , this embodiment provides a method for improving the production efficiency of low-line-width gate devices, including the following steps: first depositing source metal S and drain metal D on the epitaxial wafer 1, such as figure 2Epitaxial wafer surface treatment and device source / drain metallization process in process steps. The epitaxial wafer of the present invention can be a semiconductor device used to make transistors, such as gallium arsenide. Then coat E-Beam photoresist 2 on the epitaxial wafer, use E-Beam electron beam to carry out E-Beam photoresist development at the bottom of the gate, form the bottom opening 20, that is, the first photolithography process, the structure is as follows ...

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Abstract

The invention discloses a method and device for improving the production efficiency of a gate device with a low line width, wherein the method comprises the steps of: depositing source metal and drainmetal on an epitaxial wafer; coating the epitaxial wafer with an E-Beam photoresist; subjecting the bottom of a gate to E-Beam photoresist development by using the E-Beam electron beam; coating the epitaxial wafer with an I-Line photoresist; subjecting the top of the gate to I-Line photoresist exposure and development by using an I-Line machine; and depositing the gate metal. The top photoresistof the gate uses a conventional I-Line alignment exposure device instead of E-beam direct writing in the prior art, which can effectively improve the production efficiency of the T-gate with low linewidth. The method can reduce the use of E-beam photoresist and save production cost.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a method and device for improving the production efficiency of low line width gate devices. Background technique [0002] At present, the production process of 0.15um T-type gate in the manufacturing process of GaAs compound semiconductor uses E-Beam electron beam (electron beam evaporation source equipment) to expose the photoresist to directly reach the line width of 0.15um at the bottom of the T-type gate. Then, the formation of the top structure groove of the T-shaped gate and the evaporation of metal are carried out to form the metal contact of the 0.15um T-shaped gate. The process flow is as follows figure 1 shown. [0003] The process before the improvement has the following disadvantages: 1. Because the shape of the T-Gate is wide at the top and narrow at the bottom, this solution must first expose and develop the top photoresist of the T-shaped gate an...

Claims

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Application Information

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IPC IPC(8): H01L21/027H01L21/336H01L29/78G03F7/20G03F7/004
CPCG03F7/004G03F7/20H01L21/0274H01L29/66477H01L29/78
Inventor 吴淑芳陈智广林伟铭
Owner 福建省福联集成电路有限公司