Method for improving performance of MoS2 gas sensor by adopting W doping

A gas sensor and performance technology, applied in chemical instruments and methods, instruments, scientific instruments, etc., can solve the problems that hinder the practical application of MoS2, slow response/recovery time, difficult desorption, etc., to overcome the long response/recovery time. , the effect of reduced response/recovery time and simple process

Active Publication Date: 2019-11-15
XIANGTAN UNIV
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  • Application Information

AI Technical Summary

Problems solved by technology

These defects lead to MoS 2 Strong chemical adsorption with gas molecules, making gaseous NO 2 Difficult to get from MoS 2 Surface desorption
MoS 2 Its response / recovery time at room temperature is slow or even not recovered due to the difficult desorption at room temperature, which greatly hinders the MoS 2 practical application of

Method used

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  • Method for improving performance of MoS2 gas sensor by adopting W doping
  • Method for improving performance of MoS2 gas sensor by adopting W doping
  • Method for improving performance of MoS2 gas sensor by adopting W doping

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Embodiment

[0037] W-doped MoS with a Mo / W molar ratio of 1:2 2 As a sensitive material to make a planar interdigitated gas sensor, the specific manufacturing process is as follows:

[0038] ① Weigh 1.21 g sodium molybdate (5 mmol), 1.127 g ammonium thioacetate (15 mmol), and 3.30 g sodium tungstate (10 mmol) into a beaker, add 30 mL deionized water, and stir with a magnetic stirrer 25 minutes to dissolve;

[0039] ② Add 0.3 g sodium silicate to the above mixed solution to promote W doping MoS 2 the formation of materials;

[0040] ③Put dilute hydrochloric acid (2 mol / L) dropwise into the above solution, and adjust the pH value of the transparent solution to about 6;

[0041] ④Transfer the above homogeneous solution into a polytetrafluoroethylene liner with a volume of 150 mL, then put the liner into a stainless steel reaction kettle, seal the reaction kettle, put it in an oven and heat it for reaction at 200°C for 24 hours ;

[0042] ⑤ After the reaction kettle is naturally cooled, ...

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Abstract

The invention provides a method for improving the performance of an MoS2 gas sensor by adopting W doping. The method comprises the following steps of introducing W<4+> ions which are similar to Mo<4+>ions in radius in the growth process of MoS2 and achieving filling of vacancies in a material, thereby improving the adsorption / desorption behavior of gas molecules on the surface of the material. AW-doped MoS2 material is synthesized through a hydrothermal method and a planar interdigital NO2 gas sensor is further manufactured. The result shows that the response / recovery behavior of the MoS2 gas sensor to an NO2 gas is greatly improved through W doping, and the response / recovery time is shortened by an order of magnitude and is shortened to tens of seconds from hundreds of seconds. The method has the advantages that vacancy compensation is achieved and the response / recovery rate of the MoS2 gas sensor is improved by using the economical and effective hydrothermal method; the preparationprocess is simple; the requirements of reaction conditions on required instruments are low; and the method is simple in process and low in cost, and has a great application prospect in the field of fast gas detection at room temperature.

Description

technical field [0001] The invention relates to a semiconductor gas sensor, in particular to a method of improving MoS by W doping 2 Methods for Gas Sensor Performance. Background technique [0002] With the rapid development of modern industry, a large amount of toxic and harmful gases are discharged, and the problem of ambient air quality has become a widespread concern of people. Nitrogen oxides (NO 2 ) is a typical air pollutant that poses a threat to human health and the environment. Therefore, the development of NO with fast gas detection, high selectivity and high sensitivity 2 Gas sensor to realize NO in the environment 2 The efficient detection of gas is of great significance. [0003] MoS 2 As an efficient NO 2 Gas-sensing material that detects NO at room temperature due to the absence of a heating device 2 received widespread attention. Some theoretical calculations confirm that NO 2 Adsorbed on MoS in the form of physical adsorption 2 surface, which me...

Claims

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Application Information

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IPC IPC(8): G01N27/12C01G39/06C01G41/00
CPCG01N27/125G01N27/12C01G39/06C01G41/00C01P2004/82
Inventor 张勇刘灿谭俊江孟繁朴
Owner XIANGTAN UNIV
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