A method for improving the performance of mos2 gas sensor by using w doping

A gas sensor and performance technology, applied in chemical instruments and methods, instruments, scientific instruments, etc., can solve the problems that hinder the practical application of MoS2, slow response/recovery time, no recovery, etc., to overcome the ultra-long response/recovery time, Improve the response value and sensitivity, and stabilize the detection effect

Active Publication Date: 2022-02-18
XIANGTAN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

These defects lead to MoS 2 Strong chemical adsorption with gas molecules, making gaseous NO 2 Difficult to get from MoS 2 Surface desorption
MoS 2 Its response / recovery time at room temperature is slow or even not recovered due to the difficult desorption at room temperature, which greatly hinders the MoS 2 practical application of

Method used

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  • A method for improving the performance of mos2 gas sensor by using w doping
  • A method for improving the performance of mos2 gas sensor by using w doping
  • A method for improving the performance of mos2 gas sensor by using w doping

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Embodiment

[0037] W-doped MoS with a Mo / W molar ratio of 1:2 2 As a sensitive material to make a planar interdigitated gas sensor, the specific manufacturing process is as follows:

[0038] ① Weigh 1.21 g sodium molybdate (5 mmol), 1.127 g ammonium thioacetate (15 mmol), and 3.30 g sodium tungstate (10 mmol) into a beaker, add 30 mL deionized water, and use a magnetic stirrer Stir for 25 minutes to dissolve;

[0039] ② Add 0.3 g sodium silicate to the above mixed solution to promote W doping MoS 2 the formation of materials;

[0040] ③Put dilute hydrochloric acid (2 mol / L) dropwise into the above solution, and adjust the pH value of the transparent solution to about 6;

[0041] ④Transfer the above homogeneous solution into a polytetrafluoroethylene liner with a volume of 150 mL, then put the liner into a stainless steel reaction kettle, seal the reaction kettle, put it in an oven for heating and react at 200°C for 24 hours ;

[0042] ⑤ After the reaction kettle is naturally cooled, ...

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Abstract

The invention provides a method of improving MoS by W doping 2 A method for gas sensor performance comprising the following steps: In MoS 2 During the growth process, the introduction of Mo 4+ W with a similar ionic radius 4+ Ions can fill the material vacancies and improve the adsorption / desorption behavior of gas molecules on the material surface. Synthesized W-doped MoS via a hydrothermal method 2 material, and further produced a planar interdigitated NO 2 gas sensor. The results show that the doping of W makes MoS 2 Gas sensor for NO 2 The response / recovery behavior of the gas has been greatly improved, and the response / recovery time has been reduced by an order of magnitude, from hundreds of seconds to tens of seconds. The present invention utilizes a cost-effective hydrothermal method to achieve vacancy compensation and enhance the MoS 2 The gas sensor has the advantages of response / recovery speed, simple preparation process, low requirements for the required instruments under reaction conditions, simple process, and low cost, and has great application prospects in the field of rapid gas detection at room temperature.

Description

technical field [0001] The invention relates to a semiconductor gas sensor, in particular to a method of improving MoS by W doping 2 Methods for Gas Sensor Performance. Background technique [0002] With the rapid development of modern industry, a large amount of toxic and harmful gases are discharged, and the problem of ambient air quality has become a widespread concern of people. Nitrogen oxides (NO 2 ) is a typical air pollutant that poses a threat to human health and the environment. Therefore, the development of NO with fast gas detection, high selectivity and high sensitivity 2 Gas sensor to realize NO in the environment 2 The efficient detection of gas is of great significance. [0003] MoS 2 As an efficient NO 2 Gas-sensing material that detects NO at room temperature due to the absence of a heating device 2 received widespread attention. Some theoretical calculations confirm that NO 2 Adsorbed on MoS in the form of physical adsorption 2 surface, which me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12C01G39/06C01G41/00
CPCG01N27/125G01N27/12C01G39/06C01G41/00C01P2004/82
Inventor 张勇刘灿谭俊江孟繁朴
Owner XIANGTAN UNIV
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