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Method of cutting silicon rod

A technology of cutting method and cutting direction, which can be applied to fine working devices, manufacturing tools, stone processing equipment, etc., and can solve the problems of large silicon wafers, low yield, and high cost

Active Publication Date: 2021-02-05
XUZHOU XINJING SEMICON TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the size of the silicon rod becomes larger, the TTV (total thickness deviation) value of the silicon wafer is too large by using the existing cutting method, resulting in low yield and high cost

Method used

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  • Method of cutting silicon rod
  • Method of cutting silicon rod
  • Method of cutting silicon rod

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0104] (1) Carry out mortar cutting to the silicon rod, adjust the cutting feed speed in the process of cutting the silicon rod, wherein:

[0105] During the cutting process, set the return thread amount to 500m / min, the new thread running amount to 850m / min, and the difference between the new thread running amount and the returning thread running amount is greater than the 5% of the thread amount, set the feed speed according to formula 1:

[0106]

[0107] Vx is the feed rate at cutting position x,

[0108] R is the radius of the silicon crystal rod,

[0109] x is the feed length along the cutting direction,

[0110] Vc is the feed speed Vc=0.6 mm / min at the cutting position x=R.

[0111] (2) Evaluation: TTV (total thickness deviation) was measured by the above method, and the automatic non-contact scanning method was used to test the flatness, thickness and total thickness change of the standard GB / T 29507-2013 silicon wafer. For the results of the measurements, see ...

Embodiment 2

[0113] (1) Mortar cutting is performed on silicon rods, and the amount of new wire running is adjusted during the cutting process of silicon rods, wherein:

[0114] Before starting the cutting process, set the return line to 600m / min, and the feed speed Vc=0.8mm / min;

[0115] After starting the cutting process, the thread return amount and the feed speed remain unchanged, and the adjustment of the new thread running amount is carried out according to formula 2:

[0116]

[0117] Wx is the running amount of the new line at the cutting position x,

[0118] R is the radius of the silicon crystal rod,

[0119] x is the feed length along the cutting direction,

[0120] Wc is the amount of new thread used at the cutting position x=R, Wc=900m / min.

[0121] Wherein, when Wx

[0122] (2) Evaluation: TTV (total thickness deviation) was measured by the above method, and the automatic non-contact scanning method was used t...

Embodiment 3

[0124] (1) Carry out diamond wire cutting on silicon rods, and adjust the amount of new wire running during the cutting process of silicon rods, wherein:

[0125] Before starting the cutting process, set the return line amount to 780m / min, the first new line run amount to 890m / min, and the feed rate to 0.9mm / min;

[0126] After starting the cutting process, the thread return amount and the feed speed remain unchanged, and the first new thread running amount is adjusted to the second new thread running amount, and the second new thread running amount The amount is carried out according to formula 3:

[0127]

[0128] R is the radius of the silicon crystal rod,

[0129] x is the feed length along the cutting direction.

[0130] (2) Evaluation: TTV (total thickness deviation) was measured by the above method, and the automatic non-contact scanning method was used to test the flatness, thickness and total thickness change of the standard GB / T 29507-2013 silicon wafer. For th...

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Abstract

The invention discloses a method for cutting silicon rods. The method comprises: sticking the silicon rods; placing the bonded silicon rods on a machine and fixing them; cutting the silicon rods. Adjust the new line running amount and / or feed rate at different positions of the crystal cross section. Thus, the quality of silicon wafers obtained by cutting can be significantly improved.

Description

technical field [0001] The invention belongs to the field of crystal rod cutting, in particular, the invention relates to a method for cutting silicon rods with mortar or diamond wire. Background technique [0002] Existing crystal rod cutting methods mainly adopt mortar cutting and diamond wire cutting. Mortar cutting is to use a high-speed moving steel wire to drive the cutting mortar attached to the steel wire to rub the silicon rod, so as to achieve the cutting effect. The cutting mortar is mixed with polyethylene glycol and silicon carbide micropowder according to a certain ratio. The diamond wire cutting processing mode mainly uses high-speed steel wires to drive abrasives with high strength and sharp edge angles to cut crystal ingots. [0003] For small-sized silicon rod cutting, oil-based cutting is used for mortar cutting, which consumes a lot of wire and can be cut at a fixed feed speed. Diamond wire is generally cut with a fixed amount of wire and a fixed feed ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/04
CPCB28D5/045
Inventor 郑加镇卢健平
Owner XUZHOU XINJING SEMICON TECH CO LTD