Gate absorption suppression and short-circuit protection circuit for double-transistor igbt

Abstract

The invention belongs to the technical field of power electronic devices, and relates to a gate absorption suppression and short-circuit protection circuit for a double-tube IGBT (Insulated Gate Bipolar Transistor), which comprises a first acquisition circuit for an upper tube IGBT and a second acquisition circuit for a lower tube IGBT, which are welded on a PCB (Printed Circuit Board), the firstacquisition circuit comprises a short-circuit protection circuit, an overvoltage suppression circuit and a filtering absorption voltage stabilizing circuit, the output end of the short-circuit protection circuit is connected with the overvoltage suppression circuit and the filtering absorption voltage stabilizing circuit, and the output end of the overvoltage suppression circuit is connected withthe filtering absorption voltage stabilizing circuit through a single-phase overvoltage suppression diode; and the second acquisition circuit and the first acquisition circuit have the same structureand are mutually independent. The circuit can be used for 1700V double-tube packaged high-voltage high-power IGBTs, realizes reliable work of driving signals, effectively suppresses reverse voltage instantaneous high pulses generated when the IGBTs are turned off, and quickly and effectively protects the IGBTs in case of short circuit.

Description

technical field [0001] The invention belongs to the technical field of power electronic devices and relates to a double-tube IGBT, in particular to a gate absorption suppression and short-circuit protection circuit for the double-tube IGBT. Background technique [0002] In recent years, IGBT power devices have been more and more widely used in power conversion circuits. IGBTs work under high voltage and high current conditions, and the surrounding electromagnetic environment is very complicated. During the transmission of the driving signal from the IGBT driver board to the IGBT, it may It will be subject to electromagnetic interference, causing the IGBT to be misconducted or the switching state is out of control, which will cause circuit failure or device damage; in addition, when the IGBT is turned off, an instantaneous overvoltage will be generated between the C and E terminals. The overvoltage is sometimes as high as hundreds to thousands of volts, which poses a great th...

AI Technical Summary

Problems solved by technology

[0003] At present, the existing technologies are as follows: 1) Most of the low-voltage level (1700V) IGBTs do not use the gate absorption suppression circuit when they are applied, or this circuit module is not directly installed on the IGBT, but is set on the drive circuit board, This will cause the IGBT's anti-electromagnetic interference ability to be poor. When the drive output to the IGBT has a long line, the signal is susceptible to interference, and the IGBT will be turned on by mistake or the switch will be out of control; and there is no overvoltage suppression protection function, and the IGBT may be damaged.

2) The gate circuit module of the existing 1700V voltage level only has absorption and suppression functions, and cannot perform short-circuit protection and desaturation detection on the IGBT, and cannot realize fast and effective protection of the IGBT; 3) The gate electrode of the existing 1700V voltage level The absorbing and short-circuit protection circuit module is designed for single-tube IGBT, which cannot be applied to the absorption suppression and short-circuit protection of 1700V voltage level high-voltage and high-power double-tube IGBT; 4) The signal between the existing 1700V voltage level gate absorbing circuit module and the driver board The main single-strand cable is soldered on the PCB or connected through a connector that takes up a lot of space, which is not suitable for small space product design

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