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A kind of airgel quantum dot film, preparation method and display device comprising it

An airgel quantum and quantum dot film technology, which is applied in the direction of electrical components, semiconductor devices, electric solid devices, etc., can solve the problem of low production yield of large-scale products, low maximum dispersion of quantum dots, and uneven distribution of quantum dot layers and other problems, to achieve the effect of controllable internal hole size, increased density, and high transmittance

Active Publication Date: 2021-02-02
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The inventor believes that the disadvantages of the above solution are mainly manifested in the following: because the liquid quantum dot glue has a certain fluidity before it is cured, if the applied force is uneven when covering the second barrier film, it is easy to cause uneven distribution of the quantum dot layer Occurs, resulting in large color difference and affecting the display effect and low production yield of large-size products
In addition, when cured by ultraviolet light, since liquid quantum dots contain initiators, they are often not compatible with quantum dots, which easily leads to a lower maximum dispersion of quantum dots in quantum dots.
[0005] Among the existing technologies, there are few excellent solutions to the above-mentioned various technical problems and technical contradictions

Method used

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  • A kind of airgel quantum dot film, preparation method and display device comprising it
  • A kind of airgel quantum dot film, preparation method and display device comprising it
  • A kind of airgel quantum dot film, preparation method and display device comprising it

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Embodiment 1

[0057] In this embodiment, the airgel quantum dot film is manufactured according to the following preparation method of the airgel quantum dot film. First, the first barrier film 1 is prepared according to the following method: wherein the first barrier film 1 is prepared by the following method: First, a polyimide film layer (PI film layer) with a thickness of 125 μm is coated on the glass substrate, and then a layer of aluminum oxide with a thickness of 400 nm is deposited on the surface. Then, the black resin solution is sprayed on the lower surface of the first barrier film 1 by spraying to form a film layer with a thickness of 0.19 mm, and then the pixel isolation structure 3 is obtained through photolithography processes such as exposure and development, thereby obtaining multiple The light-emitting area, the light-emitting area includes three sub-pixel areas of uniform size, the first sub-pixel area 4, the second sub-pixel area 5 and the third sub-pixel area 6, wherein t...

Embodiment 2

[0060] This embodiment is generally similar to embodiment 1, the difference is that there are the following differences in the preparation method of the airgel quantum dot film:

[0061] 1. Quantum dot ink is obtained by mixing CdSe / ZnS core-shell quantum dots with octane solvent, with a viscosity of 15cps; the ratio of the mass of quantum dots in red quantum dot ink to the volume of octane solvent is 1.2g / mL, that is, quantum dots The mass percentage in the ink is 63.1%; the ratio of the mass of the quantum dots in the green quantum dot ink to the volume of the octane solvent is 1.7g / mL, that is, the mass percentage of the quantum dots in the ink is 70.7%.

[0062] 2. Before forming the water-oxygen barrier layer 2, bake at 100°C for 15 minutes in an environment of 10e-1 torr to volatilize the octane solvent.

Embodiment 3

[0064] In this embodiment, the airgel quantum dot film is manufactured according to the following preparation method of the airgel quantum dot film. First, the first barrier film 1 is prepared according to the following method: wherein the first barrier film 1 is prepared by the following method: First, a polyimide film layer (PI film layer) with a thickness of 125 μm is coated on the glass substrate, and then a layer of aluminum oxide with a thickness of 400 nm is deposited on the surface. Then spray the black resin solution on the lower surface of the first barrier film 1 by spraying to form a film layer with a thickness of 0.19 mm, and then make the pixel isolation structure 3 through photolithography processes such as exposure and development, thereby obtaining multiple Light-emitting area, the light-emitting area includes three sub-pixel areas of uniform size, the first sub-pixel area 4, the second sub-pixel area 5 and the third sub-pixel area 6, wherein the width is 40 μm...

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Abstract

The invention belongs to the technical field of display device manufacturing, and relates to an airgel quantum dot film, a preparation method and a display device containing the same. The preparation method includes the following steps: a. disposing the pixel isolation structure on one side surface of the first barrier film, thereby defining a plurality of light-emitting regions; the light-emitting regions include a first sub-pixel region, a second sub-pixel region and a third sub-pixel region The pixel area; b. setting the wet gel or airgel slurry inside, and post-drying to obtain the airgel layer; c. placing the quantum dot ink on the airgel layer in at least two sub-pixel areas of the light emitting area On the surface, due to the capillary phenomenon, the quantum dot ink will penetrate and be adsorbed in the pores of the airgel layer; d. A water-oxygen barrier layer is set on the airgel layer. Beneficial effects: light weight, no harmful additives, simple curing process, high application range and practicality, high stability of quantum dots, controllable macroscopic and microscopic distribution of quantum dots, simple process method, high light transmittance, etc. .

Description

technical field [0001] The invention belongs to the technical field of display device manufacturing, and relates to an airgel quantum dot film, a preparation method and a display device containing the same. Background technique [0002] Quantum dots are semiconductor nanostructures that can confine excitons in three spatial directions. By applying an electric field or light to the quantum dots, the quantum dots can emit photons to the outside. The application fields of quantum dots are extremely wide, such as the preparation of quantum dot films, which is one of the most important application forms at present. In the backlight unit of the display, blue light is emitted by the LED light source, and part of the blue light is converted into red light and green light by the quantum dot film. [0003] The general preparation method of the quantum dot film: cover the first layer of barrier film with liquid quantum dot glue and the second layer of barrier film to form a sandwich ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/50H01L51/52H01L51/56
CPCH01L33/501H01L33/505H01L2933/0041H10K50/85H10K50/8426H10K71/00
Inventor 王兵
Owner NANJING TECH CORP LTD