Unlock instant, AI-driven research and patent intelligence for your innovation.

Measuring and Controlling Aberrations in Electron Microscopy

An electron microscope, electron energy technology, applied in circuits, discharge tubes, electrical components, etc., can solve problems such as ineffectiveness, limiting the number of electron microscope calibrations, cumbersome and other problems

Active Publication Date: 2021-11-26
INT BUSINESS MASCH CORP
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To measure chromatic aberration, this method requires recalibrating the microscope for each energy setting, a tedious process
Also, none of these methods work when using optoelectronics
The difficulty of this testing procedure often limits the number of electron microscope calibrations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Measuring and Controlling Aberrations in Electron Microscopy
  • Measuring and Controlling Aberrations in Electron Microscopy
  • Measuring and Controlling Aberrations in Electron Microscopy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Embodiments of the present invention provide systems and methods to measure spherical aberration and / or chromatic aberration in cathode lens electron microscopy (e.g., low energy electron microscopy (LEEM) and photoelectron emission microscopy (PEEM)), and thereby control spherical aberration and / or chromatic aberration or chromatic aberration. Utilizing the dispersion properties of the magnetic prism array, by placing a narrow slit aperture in the incident plane to the magnetic prism array, the energy and momentum projection in the dispersion contrast aperture plane of the microscope is formed. By scanning the contrast apertures in this dispersion plane and forming a real-space image for each contrast aperture position, the spherical aberration and chromatic aberration coefficients can be extracted from the image displacement from one aperture position to the next.

[0016] now refer to figure 1 , a schematic diagram of an exemplary electron microscope 100 is shown ac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An electron microscope system and a method of measuring aberrations of the electron microscope system are disclosed. An aperture filters the electron beam at the diffraction plane of the electron microscope to pass electrons of selected energy and momentum. The displacement of the image of the passing electrons is measured at a detector in the image plane of the electron microscope. Aberration coefficients of the electron microscope are determined from at least one of the measured displacement and the energy and momentum of the passing electrons. The measured aberrations can be used to change parameters of the electron microscope or optical elements of the electron microscope, thereby controlling the overall aberration of the electron microscope.

Description

technical field [0001] The present invention relates generally to controlling aberrations in imaging devices, and more particularly to systems and methods for measuring and controlling the amount of aberrations in electron microscopes. Background technique [0002] Electron microscopes use a beam of accelerated electrons to irradiate a sample under test to obtain high-resolution images of the sample. Electron microscopes tend to suffer from certain aberrations, such as chromatic aberration, spherical aberration, etc., due to the multiple optical elements used to direct the electron beam and form an image of the sample. While these optics can be adjusted to account for aberrations, aberrations must first be measured before they can be resolved. Measuring spherical aberration and chromatic aberration in low-energy electron microscopy (LEEM) or photoelectron emission microscopy (PEEM) is a time-consuming process that is time-consuming and difficult to automate. In one method ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/05
CPCH01J37/292H01J37/153H01J2237/1534H01J2237/1508H01J37/145H01J37/1472H01J37/29H01J2237/2602
Inventor R·M·特朗普
Owner INT BUSINESS MASCH CORP