Ion implantation equipment for chip production

Abstract

The invention relates to the technical field of chip production, and discloses ion implantation equipment for chip production. The equipment comprises a shell, and a supporting frame is fixedly installed at the lower end in the shell; a fixed shell is fixedly installed at the upper end of the supporting frame, and a fixed block is fixedly installed at the lower end in the fixed shell; a movable column is slidably connected to the protruding position of the upper surface of the fixed block, and a scale plate is fixedly installed in the fixed shell; and a movable rod is slidably in lap joint with the front face of the scale plate. Through the cooperative use of an ion generator, a fixed plate, a sealing ball, a spraying shell, a spraying head and a fixing cross rod, the equipment can effectively enable the ions in the ion generator to be evenly distributed at the two ends of the interior of the spraying shell, and has the advantage that the ions can be evenly hit on a semiconductor, thereby guaranteeing that the ions on the semiconductor are evenly distributed as far as possible, and avoiding the situation that in a traditional spraying process, the sprayed ions are located on the semiconductor and are many in the middle and few in the periphery.

Description

technical field [0001] The invention relates to the technical field of chip production, in particular to an ion implantation device for chip production. Background technique [0002] In the modern semiconductor manufacturing process, many steps of ion implantation are generally used to manufacture a complete semiconductor device. The most important process parameters of ion implantation are impurity type, implantation energy and dopant dose. The type of impurity refers to which atoms are selected to implant into the silicon substrate. Generally, the types of impurities can be divided into N-type and P-type. N-type mainly includes phosphorus, arsenic, antimony, etc., while P-type mainly includes boron, indium, etc. It determines the depth of implantation of impurity atoms into the silicon crystal, high-energy implantation is deep, and low-energy implantation is shallow. The doping dose refers to the concentration of impurity atoms implanted, which determines the strength of ...

AI Technical Summary

Problems solved by technology

[0003] When the current chip ion implantation equipment is in use, most of the ion injection head has only one, which will cause the ions ejected through the injection head to be on the semiconductor, showing a situation of more in the middle and less in the periphery, so that the ions hit the semiconductor. The uneven distribution on the surface affects the quality of the semiconductor after the chip is made, and the chip needs to be remade or reprocessed again, which wastes a lot of processing time, as well as the consumption of manpower and material resources, and brings more inconvenience to people.

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