Method of manufacturing semiconductor device, method of managing parts, and recording medium

Abstract

The present invention provides a technique that includes executing a process recipe for processing a substrate; and executing a correction recipe for checking a characteristic value of a supply valveinstalled at a process gas supply line, wherein the act of executing the correction recipe comprises: supplying an inert gas into the process gas supply line for a certain period of time in a state where an adjusting valve that is installed at an exhaust portion of a process furnace and adjusts an internal pressure of the process furnace is fully opened; detecting a pressure value in a supply pipeprovided with the supply valve while supplying the inert gas into the process gas supply line in the state where the adjusting valve is fully opened; and calculating the characteristic value of the supply valve based on the detected pressure value.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor device, a component management method, a substrate processing apparatus, and a recording medium. Background technique [0002] Conventionally, a substrate processing apparatus and a semiconductor device manufacturing method for manufacturing a semiconductor device by forming a thin film on a substrate such as a silicon wafer have been developed. [0003] As one type of such substrate processing apparatuses, there is a semiconductor manufacturing apparatus that performs one step of manufacturing a semiconductor device (hereinafter referred to as a substrate processing step). As the substrate processing equipment of this semiconductor manufacturing equipment, for example, DCS gas and NH 3 The process of forming a SiN film on a substrate (hereinafter referred to as a wafer) by gas. For example, refer to Patent Document 1. [0004] In the past, especially in vertical semiconducto...

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Problems solved by technology

However, sometimes there is a problem that the Cv value fluctuates according to the number of times the valve is opened and closed, or in addition, the Cv value also fluctuates due to external disturbances such as valve temperature fluctuations, which affects the film formation result.

[0005] In addition, even if the valve Cv value in the initial state is the same, the Cv value may fluctuate due to the difference in the device environment, and the film thickness or uniformity of multiple devices will become a problem.

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