3D memory device and manufacturing method thereof

Abstract

The invention discloses a 3D memory device and a manufacturing method thereof. The 3D memory device includes a substrate, a gate stack structure, a plurality of channel columns and a plurality of channel holes, a doped region, a first conductive layer and a core part, wherein the gate stack structure is positioned above the substrate and comprises a plurality of gate conductors and a plurality ofinterlayer insulating layers which are alternately stacked; the plurality of channel columns and the plurality of channel holes penetrate through the gate stack structure; the doped region is locatedat the bottom of the channel hole and is formed in the substrate; the first conductive layer covers the inner wall of the channel hole and is in contact with the doped region; and the core part is located in the channel hole and above the doped region, the core part is doped polycrystalline silicon doped with impurity atoms with a certain concentration, and the doping concentration of the impurity atoms is adjusted so as to realize continuous adjustment of the surface warping degree of the 3D memory device. The warping degree of a wafer in an X direction or a Y direction is continuously adjusted by changing the doping concentration of impurity atoms doped in the core part in a grid line gap of the 3D storage device, and the problem of wafer warping is solved.

Description

technical field [0001] The present invention relates to memory technology, and more particularly, to 3D memory devices and manufacturing methods thereof. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. Existing 3D storage devices are mainly used as non-volatile flash memory. Compared with NOR storage devices, NAND storage devices have slightly slower reading speed, faster writing speed, a...

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Problems solved by technology

[0004] The purpose of the present invention is to provide an improved 3D storage device and its manufacturing method, by depositing polysilicon doped with different concentrations of impurity atoms in the gate line gap as the core, so as to solve the problem of wafer warping and deformation

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