Magnetic random access memory with error correction and compression circuit
A random access memory and magnetic technology, applied in the field of storage devices and magnetic random access memory, can solve the problems of long read and write delay and low performance, and achieve the effect of reducing read and write, improving performance and durability, and solving the problem of data errors.
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[0027] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0028] The present invention uses the data cache (Data Cache) to temporarily save the data to be written into the MRAM array, and reads out the data in the corresponding MRAM array through the control circuit and passes through the error correction and decompression circuit, and then merges the data to be written with it New compressed data and parity bits are reproduced and written into the MRAM array. The present invention also uses the status bit cache (FlagCache) to save the status bit of the compre...
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