Magnetic tunnel junction structure and magnetic random access memory

A magnetic tunnel junction and random storage technology, which is applied in the field of memory, can solve the problems of increasing the error rate of memory read operations, reducing the durability of memory cells, and increasing the current density, so as to achieve the reduction of critical current, reduce the power consumption of writing, and improve the efficiency of writing. speed effect

Inactive Publication Date: 2020-01-10
SHANGHAI CIYU INFORMATION TECH
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Problems solved by technology

In order to improve the thermal stability factor (Δ) of ultra-small MRAM unit devices, a series of measures such as reducing the thickness of the free layer, adding in the free layer or changing the free layer to a material with low saturation magnetic susceptibility can be used to increase the effective vertical each. Anisotropic energy density, thereby maintaining a high thermal stability factor (Δ), but the critical write current density will increase correspondingly, resulting in a decrease in the durability of the storage element. ) will decrease, which in turn will increase the error rate of memory read operations

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  • Magnetic tunnel junction structure and magnetic random access memory
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  • Magnetic tunnel junction structure and magnetic random access memory

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[0026] Please refer to the drawings in the accompanying drawings, wherein like reference numerals refer to like components. The following description is based on illustrated specific embodiments of the present application, which should not be construed as limiting other specific embodiments of the present application that are not described in detail here.

[0027] The following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments that the present application can be implemented in. The directional terms mentioned in this application, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application.

[0028] The terms "first", "second", "third", etc. (if any) in the description and claims of this application and t...

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Abstract

The present invention provides a magnetic tunnel junction structure and a magnetic random access memory. The magnetic tunnel junction structure comprises a free layer and a partition layer and a highspin intensification rate spin intensification layer having vertical anisotropy which are arranged on the free layer. Spin electrons are gathered around the free layer, and spin transfer torque for reversing the magnetization vector of the free layer is increased. The spin transfer torque of the magnetic tunnel junction in the writing process is effectively improved due to the introduction of thespin intensification layer, the reduction of the critical current (IC0) of MTJ devices can be facilitated, the writing speed of the MRAM circuit can be improved, the writing power consumption can be reduced and the durability can be improved and the structure is quite suitable for fast and ultra-low power consumption application environments.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a magnetic tunnel junction structure and a magnetic random access memory. Background technique [0002] Magnetic random access memory (MRAM) in the magnetic tunnel junction (Magnetic tunnel junction; MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA), as a free layer for storing information, has two in the vertical direction The magnetization direction, namely: up and down, corresponds to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it blank, the magnetization direction of the free layer will remain unchanged; during the writing process, if a signal different from the existing state is input, the magnetization direction of the free layer will be reversed by 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the MRAM to remain unchanged is c...

Claims

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Application Information

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IPC IPC(8): H01L27/22H01L43/08
CPCH10B61/22H10N50/10
Inventor 郭一民张云森
Owner SHANGHAI CIYU INFORMATION TECH
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